High fidelity optical quantum gates based on type II double quantum dots in a nanowire

Masoomeh Taherkhani, Morten Willatzen, Emil Vosmar Denning, Igor E. Protsenko, Niels Gregersen

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Abstract

We propose an optical gating scheme for quantum computing based on crystal-phase type II double quantum dots in an InP nanowire. The qubit is encoded on the electron spin and the gate operations are performed using stimulated Raman adiabatic passage (STIRAP), using the orbital degree of freedom in double quantum dots to form an auxiliary ground state. Successful STIRAP gating processes require an efficient coupling of both qubit ground states of the double quantum dot to the gating auxiliary ground state, and we demonstrate that this can be achieved using a charged exciton state. Crucially, by using type II dots, the hole is localized between the two spatially separated electrons in the charged exciton complex, thereby efficiently coupling the electron ground state orbitals. By taking advantage of the high fidelity state transfer by means of STIRAP in type II double quantum dots, we propose a protocol for coherently manipulating the spin-orbital quantum state of confined electrons in a quantum dot chain of an InP nanowire. We subsequently exploit the protocol to realize single- and two-qubit gates with fidelity above 0.99.
Original languageEnglish
Article number165305
JournalPhysical Review B (Condensed Matter and Materials Physics)
Volume99
Issue number16
Number of pages12
ISSN1098-0121
DOIs
Publication statusPublished - 2019

Cite this

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title = "High fidelity optical quantum gates based on type II double quantum dots in a nanowire",
abstract = "We propose an optical gating scheme for quantum computing based on crystal-phase type II double quantum dots in an InP nanowire. The qubit is encoded on the electron spin and the gate operations are performed using stimulated Raman adiabatic passage (STIRAP), using the orbital degree of freedom in double quantum dots to form an auxiliary ground state. Successful STIRAP gating processes require an efficient coupling of both qubit ground states of the double quantum dot to the gating auxiliary ground state, and we demonstrate that this can be achieved using a charged exciton state. Crucially, by using type II dots, the hole is localized between the two spatially separated electrons in the charged exciton complex, thereby efficiently coupling the electron ground state orbitals. By taking advantage of the high fidelity state transfer by means of STIRAP in type II double quantum dots, we propose a protocol for coherently manipulating the spin-orbital quantum state of confined electrons in a quantum dot chain of an InP nanowire. We subsequently exploit the protocol to realize single- and two-qubit gates with fidelity above 0.99.",
author = "Masoomeh Taherkhani and Morten Willatzen and Denning, {Emil Vosmar} and Protsenko, {Igor E.} and Niels Gregersen",
year = "2019",
doi = "10.1103/PhysRevB.99.165305",
language = "English",
volume = "99",
journal = "Physical Review B (Condensed Matter and Materials Physics)",
issn = "1098-0121",
publisher = "American Physical Society",
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High fidelity optical quantum gates based on type II double quantum dots in a nanowire. / Taherkhani, Masoomeh; Willatzen, Morten; Denning, Emil Vosmar; Protsenko, Igor E. ; Gregersen, Niels.

In: Physical Review B (Condensed Matter and Materials Physics), Vol. 99, No. 16, 165305 , 2019.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - High fidelity optical quantum gates based on type II double quantum dots in a nanowire

AU - Taherkhani, Masoomeh

AU - Willatzen, Morten

AU - Denning, Emil Vosmar

AU - Protsenko, Igor E.

AU - Gregersen, Niels

PY - 2019

Y1 - 2019

N2 - We propose an optical gating scheme for quantum computing based on crystal-phase type II double quantum dots in an InP nanowire. The qubit is encoded on the electron spin and the gate operations are performed using stimulated Raman adiabatic passage (STIRAP), using the orbital degree of freedom in double quantum dots to form an auxiliary ground state. Successful STIRAP gating processes require an efficient coupling of both qubit ground states of the double quantum dot to the gating auxiliary ground state, and we demonstrate that this can be achieved using a charged exciton state. Crucially, by using type II dots, the hole is localized between the two spatially separated electrons in the charged exciton complex, thereby efficiently coupling the electron ground state orbitals. By taking advantage of the high fidelity state transfer by means of STIRAP in type II double quantum dots, we propose a protocol for coherently manipulating the spin-orbital quantum state of confined electrons in a quantum dot chain of an InP nanowire. We subsequently exploit the protocol to realize single- and two-qubit gates with fidelity above 0.99.

AB - We propose an optical gating scheme for quantum computing based on crystal-phase type II double quantum dots in an InP nanowire. The qubit is encoded on the electron spin and the gate operations are performed using stimulated Raman adiabatic passage (STIRAP), using the orbital degree of freedom in double quantum dots to form an auxiliary ground state. Successful STIRAP gating processes require an efficient coupling of both qubit ground states of the double quantum dot to the gating auxiliary ground state, and we demonstrate that this can be achieved using a charged exciton state. Crucially, by using type II dots, the hole is localized between the two spatially separated electrons in the charged exciton complex, thereby efficiently coupling the electron ground state orbitals. By taking advantage of the high fidelity state transfer by means of STIRAP in type II double quantum dots, we propose a protocol for coherently manipulating the spin-orbital quantum state of confined electrons in a quantum dot chain of an InP nanowire. We subsequently exploit the protocol to realize single- and two-qubit gates with fidelity above 0.99.

U2 - 10.1103/PhysRevB.99.165305

DO - 10.1103/PhysRevB.99.165305

M3 - Journal article

VL - 99

JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

SN - 1098-0121

IS - 16

M1 - 165305

ER -