Abstract
The thermal generation of defects in pure and doped Pb1−xUxF2+2x (x=0, 0.05and0.10) has been studied by specific heat measurements between 475 k and 875 k. A simple phenomenological mean field thermodynamic model has been developed and used to interpret the data. At low temperatures the result of doping is an increase of the thermally generated defect concentration; at high temperatures the effect is reversed. The microscopic defect structure of Ba0.9U0.1F2.2 has been studied by diffuse quasielastic neutron scattering experiments at room temperature. The experimental observations are in good agreement with a model calculation based on a defect structure of 212-clusters.
Original language | English |
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Journal | Solid State Ionics |
Volume | 9-10 |
Issue number | 1 |
Pages (from-to) | 543-548 |
ISSN | 0167-2738 |
DOIs | |
Publication status | Published - 1983 |