Hall effect measurement for precise sheet resistance and thickness evaluation of Ruthenium thin films using non-equidistant four-point probes

Frederik Westergaard Østerberg; Maria-Louise Witthøft; Shibesh Dutta; Johan Meersschaut; Christoph Adelmann; Peter Folmer Nielsen; Ole Hansen; Dirch Hjorth Petersen

doi:10.1063/1.5010399

Hall effect measurement for precise sheet resistance and thickness evaluation of Ruthenium thin films using non-equidistant four-point probes

Frederik Westergaard Østerberg, Maria-Louise Witthøft, Shibesh Dutta, Johan Meersschaut, Christoph Adelmann, Peter Folmer Nielsen, Ole Hansen, Dirch Hjorth Petersen^*

^*Corresponding author for this work

Surface Physics and Catalysis

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Abstract

We present a new micro Hall effect measurement method using non-equidistant electrodes. We show theoretically and verify experimentally that it is advantageous to use non-equidistant electrodes for samples with low Hall sheet resistance. We demonstrate the new method by experiments where Hall sheet carrier densities and Hall mobilities of Ruthenium thin films (3-30 nm) are determined. The measurements show that it is possible to measure Hall mobilities as low as 1 cm²V¹s¹ with a relative standard deviation of 2-3%. We show a linear relation between measured Hall sheet carrier density and film thickness. Thus, the method can be used to monitor thickness variations of ultra-thin metal films.

Original language	English
Article number	055206
Journal	A I P Advances
Volume	8
Issue number	5
Number of pages	7
ISSN	2158-3226
DOIs	https://doi.org/10.1063/1.5010399
Publication status	Published - 2018

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title = "Hall effect measurement for precise sheet resistance and thickness evaluation of Ruthenium thin films using non-equidistant four-point probes",

abstract = "We present a new micro Hall effect measurement method using non-equidistant electrodes. We show theoretically and verify experimentally that it is advantageous to use non-equidistant electrodes for samples with low Hall sheet resistance. We demonstrate the new method by experiments where Hall sheet carrier densities and Hall mobilities of Ruthenium thin films (3-30 nm) are determined. The measurements show that it is possible to measure Hall mobilities as low as 1 cm2V1s1 with a relative standard deviation of 2-3%. We show a linear relation between measured Hall sheet carrier density and film thickness. Thus, the method can be used to monitor thickness variations of ultra-thin metal films.",

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T1 - Hall effect measurement for precise sheet resistance and thickness evaluation of Ruthenium thin films using non-equidistant four-point probes

AU - Østerberg, Frederik Westergaard

AU - Witthøft, Maria-Louise

AU - Dutta, Shibesh

AU - Meersschaut, Johan

AU - Adelmann, Christoph

AU - Nielsen, Peter Folmer

AU - Hansen, Ole

AU - Petersen, Dirch Hjorth

PY - 2018

Y1 - 2018

N2 - We present a new micro Hall effect measurement method using non-equidistant electrodes. We show theoretically and verify experimentally that it is advantageous to use non-equidistant electrodes for samples with low Hall sheet resistance. We demonstrate the new method by experiments where Hall sheet carrier densities and Hall mobilities of Ruthenium thin films (3-30 nm) are determined. The measurements show that it is possible to measure Hall mobilities as low as 1 cm2V1s1 with a relative standard deviation of 2-3%. We show a linear relation between measured Hall sheet carrier density and film thickness. Thus, the method can be used to monitor thickness variations of ultra-thin metal films.

AB - We present a new micro Hall effect measurement method using non-equidistant electrodes. We show theoretically and verify experimentally that it is advantageous to use non-equidistant electrodes for samples with low Hall sheet resistance. We demonstrate the new method by experiments where Hall sheet carrier densities and Hall mobilities of Ruthenium thin films (3-30 nm) are determined. The measurements show that it is possible to measure Hall mobilities as low as 1 cm2V1s1 with a relative standard deviation of 2-3%. We show a linear relation between measured Hall sheet carrier density and film thickness. Thus, the method can be used to monitor thickness variations of ultra-thin metal films.

U2 - 10.1063/1.5010399

DO - 10.1063/1.5010399

M3 - Journal article

SN - 2158-3226

VL - 8

JO - A I P Advances

JF - A I P Advances

IS - 5

M1 - 055206

ER -

Hall effect measurement for precise sheet resistance and thickness evaluation of Ruthenium thin films using non-equidistant four-point probes

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