Growth of vertical InAs nanowires on heterostructured substrates

Stefano Roddaro, Philippe Caroff, Giorgio Biasiol, Francesca Rossi, Claudio Bocchi, Kristian Nilsson, Linus Froberg, Jakob Birkedal Wagner, Lars Samuelson, Lars-Erik Wernersson, Lucia Sorba

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

We investigate the Au-assisted growth of InAs nanowires on two different kinds of heterostructured substrates: GaAs/AlGaAs structures capped by a 50 nm thick InAs layer grown by molecular beam epitaxy and a 2 mu m thick InAs buffer layer on Si(111) obtained by vapor phase epitaxy. Morphological and structural properties of substrates and nanowires are analyzed by atomic force and transmission electron microscopy. Our results indicate a promising direction for the integration of III-V nanostructures on Si-based electronics as well as for the development of novel micromechanical structures incorporating nanowires as their active elements.
Original languageEnglish
JournalNanotechnology
Volume20
Issue number28
Pages (from-to)285303
ISSN0957-4484
DOIs
Publication statusPublished - 2009
Externally publishedYes

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