Growth of InAs Wurtzite Nanocrosses from Hexagonal and Cubic Basis

Filip Krizek, Thomas Kanne, Davydas Razmadze, Erik Johnson, Jesper Nygaard, Charles M Marcus, Peter Krogstrup

Research output: Contribution to journalLetterResearchpeer-review

205 Downloads (Pure)

Abstract

Epitaxially connected nanowires allow for the design of electron transport experiments and applications beyond the standard two terminal device geometries. In this Letter, we present growth methods of three distinct types of wurtzite structured InAs nanocrosses via the vapor-liquid-solid mechanism. Two methods use conventional wurtzite nanowire arrays as a 6-fold hexagonal basis for growing single crystal wurtzite nanocrosses. A third method uses the 2-fold cubic symmetry of (100) substrates to form well-defined coherent inclusions of zinc blende in the center of the nanocrosses. We show that all three types of nanocrosses can be transferred undamaged to arbitrary substrates, which allows for structural, compositional, and electrical characterization. We further demonstrate the potential for synthesis of as-grown nanowire networks and for using nanowires as shadow masks for in situ fabricated junctions in radial nanowire heterostructures.
Original languageEnglish
JournalNano letters
Volume17
Issue number10
Pages (from-to)6090-6096
ISSN1530-6984
DOIs
Publication statusPublished - 2017

Keywords

  • Kinked nanowires
  • branched nanowires
  • nanowire junctions
  • nanowire shadow mask
  • nanowire networks

Cite this

Krizek, F., Kanne, T., Razmadze, D., Johnson, E., Nygaard, J., Marcus, C. M., & Krogstrup, P. (2017). Growth of InAs Wurtzite Nanocrosses from Hexagonal and Cubic Basis. Nano letters, 17(10), 6090-6096. https://doi.org/10.1021/acs.nanolett.7b02604