Growth of GaSb1-xBix by molecular beam epitaxy

Yuxin Song; Shumin Wang; Ivy Saha Roy; Peixiong Shi; Anders Hallen

doi:10.1116/1.3672025

Growth of GaSb₁-_xBi_x by molecular beam epitaxy

Yuxin Song, Shumin Wang, Ivy Saha Roy, Peixiong Shi, Anders Hallen

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi concentration in the samples was found to increase with increasing growth temperature and Bi flux. The position of GaSb1-xBix layer peak in XRD rocking curves is found to be correlated to Bi composition. Surface and structural properties of the samples were also investigated. Samples grown on GaSb and GaAs substrates were compared and no apparent difference for Bi incorporation was found.

Original language	English
Journal	Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures
Volume	30
Issue number	2
Pages (from-to)	02B114
Number of pages	7
ISSN	1071-1023
DOIs	https://doi.org/10.1116/1.3672025
Publication status	Published - 2012

Access to Document

10.1116/1.3672025

OpenUrl availability

Full text

Cite this

@article{c72967b1356b48c59122e36f189d3413,

title = "Growth of GaSb1-xBix by molecular beam epitaxy",

abstract = "Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi concentration in the samples was found to increase with increasing growth temperature and Bi flux. The position of GaSb1-xBix layer peak in XRD rocking curves is found to be correlated to Bi composition. Surface and structural properties of the samples were also investigated. Samples grown on GaSb and GaAs substrates were compared and no apparent difference for Bi incorporation was found.",

author = "Yuxin Song and Shumin Wang and Roy, {Ivy Saha} and Peixiong Shi and Anders Hallen",

year = "2012",

doi = "10.1116/1.3672025",

language = "English",

volume = "30",

pages = "02B114 ",

journal = "Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Growth of GaSb1-xBix by molecular beam epitaxy

AU - Song, Yuxin

AU - Wang, Shumin

AU - Roy, Ivy Saha

AU - Shi, Peixiong

AU - Hallen, Anders

PY - 2012

Y1 - 2012

N2 - Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi concentration in the samples was found to increase with increasing growth temperature and Bi flux. The position of GaSb1-xBix layer peak in XRD rocking curves is found to be correlated to Bi composition. Surface and structural properties of the samples were also investigated. Samples grown on GaSb and GaAs substrates were compared and no apparent difference for Bi incorporation was found.

AB - Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi concentration in the samples was found to increase with increasing growth temperature and Bi flux. The position of GaSb1-xBix layer peak in XRD rocking curves is found to be correlated to Bi composition. Surface and structural properties of the samples were also investigated. Samples grown on GaSb and GaAs substrates were compared and no apparent difference for Bi incorporation was found.

U2 - 10.1116/1.3672025

DO - 10.1116/1.3672025

M3 - Journal article

SN - 1071-1023

VL - 30

SP - 02B114

JO - Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures

IS - 2