Growth of GaSb1-xBix by molecular beam epitaxy

Research output: Contribution to journalJournal article – Annual report year: 2012Researchpeer-review

  • Author: Song, Yuxin

    Chalmers University of Technology, Sweden

  • Author: Wang, Shumin

    Chalmers University of Technology, Sweden

  • Author: Roy, Ivy Saha

    Chalmers University of Technology, Sweden

  • Author: Shi, Peixiong

  • Author: Hallen, Anders

    KTH - Royal Institute of Technology, Sweden

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Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi concentration in the samples was found to increase with increasing growth temperature and Bi flux. The position of GaSb1-xBix layer peak in XRD rocking curves is found to be correlated to Bi composition. Surface and structural properties of the samples were also investigated. Samples grown on GaSb and GaAs substrates were compared and no apparent difference for Bi incorporation was found.
Original languageEnglish
JournalJournal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures
Volume30
Issue number2
Pages (from-to)02B114
Number of pages7
ISSN1071-1023
DOIs
Publication statusPublished - 2012
CitationsWeb of Science® Times Cited: No match on DOI

ID: 53117334