TY - JOUR
T1 - Growth and thermoelectric properties of FeSb2 films produced by pulsed laser deposition
AU - Sun, Ye
AU - Canulescu, Stela
AU - Sun, Peijie
AU - Steglich, Frank
AU - Pryds, Nini
AU - Brummerstedt Iversen, B.
PY - 2011
Y1 - 2011
N2 - Thermoelectric FeSb2 films were produced by pulsed laser deposition on silica substrates in a low-pressure Ar environment. The growth conditions for near phase-pure FeSb2 films were confirmed to be optimized at a substrate temperature of 425°C, an Ar pressure of 2 Pa, and deposition time of 3 h by ablating specifically prepared compound targets made of Fe and Sb powders in atomic ratio of 1:4. The thermoelectric transport properties of FeSb2 films were investigated. Pulsed laser deposition was demonstrated as a method for production of good-quality FeSb2 films.
AB - Thermoelectric FeSb2 films were produced by pulsed laser deposition on silica substrates in a low-pressure Ar environment. The growth conditions for near phase-pure FeSb2 films were confirmed to be optimized at a substrate temperature of 425°C, an Ar pressure of 2 Pa, and deposition time of 3 h by ablating specifically prepared compound targets made of Fe and Sb powders in atomic ratio of 1:4. The thermoelectric transport properties of FeSb2 films were investigated. Pulsed laser deposition was demonstrated as a method for production of good-quality FeSb2 films.
KW - Magnetic refrigeration
KW - Magnetisk køling
U2 - 10.1007/s00339-011-6431-z
DO - 10.1007/s00339-011-6431-z
M3 - Journal article
VL - 104
SP - 883
EP - 887
JO - Applied Physics A: Materials Science & Processing
JF - Applied Physics A: Materials Science & Processing
SN - 0947-8396
IS - 3
ER -