TY - JOUR
T1 - Graphene on graphene antidot lattices
T2 - Electronic and transport properties
AU - Gregersen, Søren Schou
AU - Pedersen, Jesper Goor
AU - Power, Stephen
AU - Jauho, Antti-Pekka
N1 - ©2015 American Physical Society
PY - 2015
Y1 - 2015
N2 - Graphene bilayer systems are known to exhibit a band gap when the layer symmetry is broken by applying a perpendicular electric field. The resulting band structure resembles that of a conventional semiconductor with a parabolic dispersion. Here, we introduce a bilayer graphene heterostructure, where single-layer graphene is placed on top of another layer of graphene with a regular lattice of antidots. We dub this class of graphene systems GOAL: graphene on graphene antidot lattice. By varying the structure geometry, band-structure engineering can be performed to obtain linearly dispersing bands (with a high concomitant mobility), which nevertheless can be made gapped with a perpendicular field. We analyze the electronic structure and transport properties of various types of GOALs, and draw general conclusions about their properties to aid their design in experiments.
AB - Graphene bilayer systems are known to exhibit a band gap when the layer symmetry is broken by applying a perpendicular electric field. The resulting band structure resembles that of a conventional semiconductor with a parabolic dispersion. Here, we introduce a bilayer graphene heterostructure, where single-layer graphene is placed on top of another layer of graphene with a regular lattice of antidots. We dub this class of graphene systems GOAL: graphene on graphene antidot lattice. By varying the structure geometry, band-structure engineering can be performed to obtain linearly dispersing bands (with a high concomitant mobility), which nevertheless can be made gapped with a perpendicular field. We analyze the electronic structure and transport properties of various types of GOALs, and draw general conclusions about their properties to aid their design in experiments.
U2 - 10.1103/PhysRevB.91.115424
DO - 10.1103/PhysRevB.91.115424
M3 - Journal article
SN - 0163-1829
VL - 91
SP - 115424
JO - Physical Review B
JF - Physical Review B
IS - 11
ER -