Graphene electrodes for n-type organic field-effect transistors

This work presents a convenient and contamination safe E-beam lithography process for microstructuring of graphene flakes. Exfoliated graphene flakes were deposited on oxidized silicon wafers and subsequently patterned by E-beam lithography, to be used as source and drain electrodes in an organic field-effect transistor configuration (OFET). Single tip tungsten as well as microscale multi-point probes were used to electrically contact individual devices, making permanent connections unnecessary. The device platform has been tested with a thin film of para-hexaphenylene (p6P) as the semiconducting channel material.