Graphene antidot lattice transport measurements

David Mackenzie, Alberto Cagliani, Lene Gammelgaard, Bjarke Sørensen Jessen, Dirch Hjorth Petersen, Peter Bøggild

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Abstract

We investigate graphene devices patterned with a narrow band of holes perpendicular to the current flow, a few-row graphene antidot lattice (FR-GAL). Theoretical reports suggest that a FR-GAL can have a bandgap with a relatively small reduction of the transmission compared to what is typical for antidot arrays devices. Graphene devices were fabricated using 100 keV electron beam lithography (EBL) for nanopatterning as well as for defining electrical contacts. Patterns with hole diameter and neck widths of order 30 nm were produced, which is the highest reported pattern density of antidot lattices in graphene reported defined by EBL. Electrical measurements showed that devices with one and five rows exhibited field effect mobility of ∼100 cm2/Vs, while a larger number of rows, around 40, led to a significant reduction of field effect mobility (<5 cm2/Vs). The carrier mobility was measured as a function of temperature, with the low-temperature behaviour being well described by variable range hopping, indicating the transport to be dominated by disorder.
Original languageEnglish
JournalInternational Journal of Nanotechnology
Volume14
Issue number1-6
Number of pages9
ISSN1475-7435
DOIs
Publication statusPublished - 2017

Keywords

  • Graphene
  • Antidot lattice
  • Nanomesh
  • Nanoarray
  • Electron beam lithography
  • EBL
  • Variable range hopping
  • Nanopattering

Cite this

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title = "Graphene antidot lattice transport measurements",
abstract = "We investigate graphene devices patterned with a narrow band of holes perpendicular to the current flow, a few-row graphene antidot lattice (FR-GAL). Theoretical reports suggest that a FR-GAL can have a bandgap with a relatively small reduction of the transmission compared to what is typical for antidot arrays devices. Graphene devices were fabricated using 100 keV electron beam lithography (EBL) for nanopatterning as well as for defining electrical contacts. Patterns with hole diameter and neck widths of order 30 nm were produced, which is the highest reported pattern density of antidot lattices in graphene reported defined by EBL. Electrical measurements showed that devices with one and five rows exhibited field effect mobility of ∼100 cm2/Vs, while a larger number of rows, around 40, led to a significant reduction of field effect mobility (<5 cm2/Vs). The carrier mobility was measured as a function of temperature, with the low-temperature behaviour being well described by variable range hopping, indicating the transport to be dominated by disorder.",
keywords = "Graphene, Antidot lattice, Nanomesh, Nanoarray, Electron beam lithography, EBL, Variable range hopping, Nanopattering",
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year = "2017",
doi = "10.1504/IJNT.2017.082469",
language = "English",
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journal = "International Journal of Nanotechnology",
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Graphene antidot lattice transport measurements. / Mackenzie, David; Cagliani, Alberto; Gammelgaard, Lene; Jessen, Bjarke Sørensen; Petersen, Dirch Hjorth; Bøggild, Peter.

In: International Journal of Nanotechnology, Vol. 14, No. 1-6, 2017.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Graphene antidot lattice transport measurements

AU - Mackenzie, David

AU - Cagliani, Alberto

AU - Gammelgaard, Lene

AU - Jessen, Bjarke Sørensen

AU - Petersen, Dirch Hjorth

AU - Bøggild, Peter

PY - 2017

Y1 - 2017

N2 - We investigate graphene devices patterned with a narrow band of holes perpendicular to the current flow, a few-row graphene antidot lattice (FR-GAL). Theoretical reports suggest that a FR-GAL can have a bandgap with a relatively small reduction of the transmission compared to what is typical for antidot arrays devices. Graphene devices were fabricated using 100 keV electron beam lithography (EBL) for nanopatterning as well as for defining electrical contacts. Patterns with hole diameter and neck widths of order 30 nm were produced, which is the highest reported pattern density of antidot lattices in graphene reported defined by EBL. Electrical measurements showed that devices with one and five rows exhibited field effect mobility of ∼100 cm2/Vs, while a larger number of rows, around 40, led to a significant reduction of field effect mobility (<5 cm2/Vs). The carrier mobility was measured as a function of temperature, with the low-temperature behaviour being well described by variable range hopping, indicating the transport to be dominated by disorder.

AB - We investigate graphene devices patterned with a narrow band of holes perpendicular to the current flow, a few-row graphene antidot lattice (FR-GAL). Theoretical reports suggest that a FR-GAL can have a bandgap with a relatively small reduction of the transmission compared to what is typical for antidot arrays devices. Graphene devices were fabricated using 100 keV electron beam lithography (EBL) for nanopatterning as well as for defining electrical contacts. Patterns with hole diameter and neck widths of order 30 nm were produced, which is the highest reported pattern density of antidot lattices in graphene reported defined by EBL. Electrical measurements showed that devices with one and five rows exhibited field effect mobility of ∼100 cm2/Vs, while a larger number of rows, around 40, led to a significant reduction of field effect mobility (<5 cm2/Vs). The carrier mobility was measured as a function of temperature, with the low-temperature behaviour being well described by variable range hopping, indicating the transport to be dominated by disorder.

KW - Graphene

KW - Antidot lattice

KW - Nanomesh

KW - Nanoarray

KW - Electron beam lithography

KW - EBL

KW - Variable range hopping

KW - Nanopattering

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DO - 10.1504/IJNT.2017.082469

M3 - Journal article

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JO - International Journal of Nanotechnology

JF - International Journal of Nanotechnology

SN - 1475-7435

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