Grain-size effect on pressure-induced semiconductor-to-metal transition in ZnS

Jianzhong Jiang, Leif Gerward, D. Frost, R. Secco, J. Peyronneau, J.S. Olsen

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The grain-size effect on the semiconductor-to-metal transition in ZnS has been investigated by in situ high-pressure electrical resistance and optical measurements. It is found that the grain-size effect can elevate the transition pressure of ZnS in a larger pressure range. On the basis of the results obtained and results reported in the literature, we demonstrate that the dangers of using the transition pressures of the II–VI compounds as pressure calibrators without a detailed knowledge of their grain-size effects on the transition pressures cannot be overstressed. ©1999 American Institute of Physics.
Original languageEnglish
JournalJournal of Applied Physics
Issue number11
Pages (from-to)6608-6610
Publication statusPublished - 1999

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Copyright (1999) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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