Giant tunnel-electron injection in nitrogen-doped graphene

Jerome Lagoute, Frederic Joucken, Vincent Repain, Yann Tison, Cyril Chacon, Amandine Bellec, Yann Girard, Robert Sporken, Edward H. Conrad, Francois Ducastelle, Mattias Lau Nøhr Palsgaard, Nick Papior Andersen, Mads Brandbyge, Sylvie Rousset

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Scanning tunneling microscopy experiments have been performed to measure the local electron injection in nitrogen-doped graphene on SiC(000) and were successfully compared to ab initio calculations. In graphene, a gaplike feature is measured around the Fermi level due to a phonon-mediated tunneling channel. At nitrogen sites, this feature vanishes due to an increase of the elastic channel that is allowed because of symmetry breaking induced by the nitrogen atoms. A large conductance enhancement by a factor of up to 500 was measured at the Fermi level by comparing local spectroscopy at nitrogen sites and at carbon sites. Nitrogen doping can therefore be proposed as a way to improve tunnel-electron injection in graphene.
Original languageEnglish
Article number125442
JournalPhysical Review B Condensed Matter
Issue number12
Number of pages5
Publication statusPublished - 2015



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