Giant tunnel-electron injection in nitrogen-doped graphene

Jerome Lagoute; Frederic Joucken; Vincent Repain; Yann Tison; Cyril Chacon; Amandine Bellec; Yann Girard; Robert Sporken; Edward H. Conrad; Francois Ducastelle; Mattias Lau Nøhr Palsgaard; Nick Papior Andersen; Mads Brandbyge; Sylvie Rousset

doi:10.1103/PhysRevB.91.125442

Giant tunnel-electron injection in nitrogen-doped graphene

Jerome Lagoute, Frederic Joucken, Vincent Repain, Yann Tison, Cyril Chacon, Amandine Bellec, Yann Girard, Robert Sporken, Edward H. Conrad, Francois Ducastelle, Mattias Lau Nøhr Palsgaard, Nick Papior Andersen, Mads Brandbyge, Sylvie Rousset

Center for Nanostructured Graphene

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

Scanning tunneling microscopy experiments have been performed to measure the local electron injection in nitrogen-doped graphene on SiC(000) and were successfully compared to ab initio calculations. In graphene, a gaplike feature is measured around the Fermi level due to a phonon-mediated tunneling channel. At nitrogen sites, this feature vanishes due to an increase of the elastic channel that is allowed because of symmetry breaking induced by the nitrogen atoms. A large conductance enhancement by a factor of up to 500 was measured at the Fermi level by comparing local spectroscopy at nitrogen sites and at carbon sites. Nitrogen doping can therefore be proposed as a way to improve tunnel-electron injection in graphene.

Original language	English
Article number	125442
Journal	Physical Review B Condensed Matter
Volume	91
Issue number	12
Number of pages	5
ISSN	0163-1829
DOIs	https://doi.org/10.1103/PhysRevB.91.125442
Publication status	Published - 2015

Keywords

PHYSICS,

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Lagoute, Jerome ; Joucken, Frederic ; Repain, Vincent ; Tison, Yann ; Chacon, Cyril ; Bellec, Amandine ; Girard, Yann ; Sporken, Robert ; Conrad, Edward H. ; Ducastelle, Francois ; Palsgaard, Mattias Lau Nøhr ; Andersen, Nick Papior ; Brandbyge, Mads ; Rousset, Sylvie. / Giant tunnel-electron injection in nitrogen-doped graphene. In: Physical Review B Condensed Matter. 2015 ; Vol. 91, No. 12.

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abstract = "Scanning tunneling microscopy experiments have been performed to measure the local electron injection in nitrogen-doped graphene on SiC(000) and were successfully compared to ab initio calculations. In graphene, a gaplike feature is measured around the Fermi level due to a phonon-mediated tunneling channel. At nitrogen sites, this feature vanishes due to an increase of the elastic channel that is allowed because of symmetry breaking induced by the nitrogen atoms. A large conductance enhancement by a factor of up to 500 was measured at the Fermi level by comparing local spectroscopy at nitrogen sites and at carbon sites. Nitrogen doping can therefore be proposed as a way to improve tunnel-electron injection in graphene.",

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Giant tunnel-electron injection in nitrogen-doped graphene. / Lagoute, Jerome; Joucken, Frederic; Repain, Vincent; Tison, Yann; Chacon, Cyril; Bellec, Amandine; Girard, Yann; Sporken, Robert; Conrad, Edward H.; Ducastelle, Francois; Palsgaard, Mattias Lau Nøhr; Andersen, Nick Papior ; Brandbyge, Mads; Rousset, Sylvie.

In: Physical Review B Condensed Matter, Vol. 91, No. 12, 125442, 2015.

Research output: Contribution to journal › Journal article › Research › peer-review

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T1 - Giant tunnel-electron injection in nitrogen-doped graphene

AU - Lagoute, Jerome

AU - Joucken, Frederic

AU - Repain, Vincent

AU - Tison, Yann

AU - Chacon, Cyril

AU - Bellec, Amandine

AU - Girard, Yann

AU - Sporken, Robert

AU - Conrad, Edward H.

AU - Ducastelle, Francois

AU - Palsgaard, Mattias Lau Nøhr

AU - Andersen, Nick Papior

AU - Brandbyge, Mads

AU - Rousset, Sylvie

PY - 2015

Y1 - 2015

N2 - Scanning tunneling microscopy experiments have been performed to measure the local electron injection in nitrogen-doped graphene on SiC(000) and were successfully compared to ab initio calculations. In graphene, a gaplike feature is measured around the Fermi level due to a phonon-mediated tunneling channel. At nitrogen sites, this feature vanishes due to an increase of the elastic channel that is allowed because of symmetry breaking induced by the nitrogen atoms. A large conductance enhancement by a factor of up to 500 was measured at the Fermi level by comparing local spectroscopy at nitrogen sites and at carbon sites. Nitrogen doping can therefore be proposed as a way to improve tunnel-electron injection in graphene.

AB - Scanning tunneling microscopy experiments have been performed to measure the local electron injection in nitrogen-doped graphene on SiC(000) and were successfully compared to ab initio calculations. In graphene, a gaplike feature is measured around the Fermi level due to a phonon-mediated tunneling channel. At nitrogen sites, this feature vanishes due to an increase of the elastic channel that is allowed because of symmetry breaking induced by the nitrogen atoms. A large conductance enhancement by a factor of up to 500 was measured at the Fermi level by comparing local spectroscopy at nitrogen sites and at carbon sites. Nitrogen doping can therefore be proposed as a way to improve tunnel-electron injection in graphene.

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DO - 10.1103/PhysRevB.91.125442

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JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

SN - 1098-0121

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