TY - JOUR
T1 - Giant Photogalvanic Effect in Noncentrosymmetric Plasmonic Nanoparticles
AU - Zhukovsky, Sergei
AU - Babicheva, Viktoriia
AU - Evlyukhin, Andrey B.
AU - Protsenko, Igor E.
AU - Lavrinenko, Andrei
AU - Uskov, Alexander
PY - 2014
Y1 - 2014
N2 - Photoelectric properties of noncentrosymmetric, similarly oriented metallic nanoparticles embedded in a
homogeneous semiconductor matrix are theoretically studied. Because of the asymmetric shape of the
nanoparticle boundary, photoelectron emission acquires a preferred direction, resulting in a photocurrent
flow in that direction when nanoparticles are uniformly illuminated by a homogeneous plane wave. This
effect is a direct analogy of the photogalvanic (or bulk photovoltaic) effect known to exist in media with
noncentrosymmetric crystal structure, such as doped lithium niobate or bismuth ferrite, but is several orders
of magnitude stronger. Termed the giant plasmonic photogalvanic effect, the reported phenomenon is
valuable for characterizing photoemission and photoconductive properties of plasmonic nanostructures and
can find many uses for photodetection and photovoltaic applications.
AB - Photoelectric properties of noncentrosymmetric, similarly oriented metallic nanoparticles embedded in a
homogeneous semiconductor matrix are theoretically studied. Because of the asymmetric shape of the
nanoparticle boundary, photoelectron emission acquires a preferred direction, resulting in a photocurrent
flow in that direction when nanoparticles are uniformly illuminated by a homogeneous plane wave. This
effect is a direct analogy of the photogalvanic (or bulk photovoltaic) effect known to exist in media with
noncentrosymmetric crystal structure, such as doped lithium niobate or bismuth ferrite, but is several orders
of magnitude stronger. Termed the giant plasmonic photogalvanic effect, the reported phenomenon is
valuable for characterizing photoemission and photoconductive properties of plasmonic nanostructures and
can find many uses for photodetection and photovoltaic applications.
U2 - 10.1103/PhysRevX.4.031038
DO - 10.1103/PhysRevX.4.031038
M3 - Journal article
VL - 4
JO - Physical Review X
JF - Physical Review X
SN - 2160-3308
IS - 3
M1 - 038-1
ER -