Giant Geometrically Amplified Piezoresistance in Metal-Semiconductor Hybrid Resistors

Ole Hansen; Kasper Reck; Erik Vilain Thomsen

doi:10.1063/1.3033558

Giant Geometrically Amplified Piezoresistance in Metal-Semiconductor Hybrid Resistors

Ole Hansen, Kasper Reck, Erik Vilain Thomsen

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Abstract

We show that very high geometrically amplified piezoresistance can indeed be obtained in microstructured metal-semiconductor hybrid devices, even significantly higher amplification factors than the factor of approximately 8 demonstrated recently by Rowe and co-workers may be achieved. However, we also show that this amplification cannot be used to realize high sensitivity sensor devices due to limitation of the applied voltage across the device when the transfer resistance is smaller than the total resistance of the device. In that case, the sensitivity in units of V V−1 Pa−1 is always less than the sensitivity of conventional piezoresistors fabricated in the same piezoresistive material. ©2008 American Institute of Physics

Original language	English
Journal	Journal of Applied Physics
Volume	104
Issue number	11
Pages (from-to)	114510
ISSN	0021-8979
DOIs	https://doi.org/10.1063/1.3033558
Publication status	Published - 2008

Bibliographical note

Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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http://link.aip.org/link/?JAPIAU/104/114510/1

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@article{b84b64af788147fabb81fc01aaa25365,

title = "Giant Geometrically Amplified Piezoresistance in Metal-Semiconductor Hybrid Resistors",

abstract = "We show that very high geometrically amplified piezoresistance can indeed be obtained in microstructured metal-semiconductor hybrid devices, even significantly higher amplification factors than the factor of approximately 8 demonstrated recently by Rowe and co-workers may be achieved. However, we also show that this amplification cannot be used to realize high sensitivity sensor devices due to limitation of the applied voltage across the device when the transfer resistance is smaller than the total resistance of the device. In that case, the sensitivity in units of V V−1 Pa−1 is always less than the sensitivity of conventional piezoresistors fabricated in the same piezoresistive material. {\textcopyright}2008 American Institute of Physics",

author = "Ole Hansen and Kasper Reck and Thomsen, {Erik Vilain}",

note = "Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",

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AU - Hansen, Ole

AU - Reck, Kasper

AU - Thomsen, Erik Vilain

N1 - Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 2008

Y1 - 2008

N2 - We show that very high geometrically amplified piezoresistance can indeed be obtained in microstructured metal-semiconductor hybrid devices, even significantly higher amplification factors than the factor of approximately 8 demonstrated recently by Rowe and co-workers may be achieved. However, we also show that this amplification cannot be used to realize high sensitivity sensor devices due to limitation of the applied voltage across the device when the transfer resistance is smaller than the total resistance of the device. In that case, the sensitivity in units of V V−1 Pa−1 is always less than the sensitivity of conventional piezoresistors fabricated in the same piezoresistive material. ©2008 American Institute of Physics

AB - We show that very high geometrically amplified piezoresistance can indeed be obtained in microstructured metal-semiconductor hybrid devices, even significantly higher amplification factors than the factor of approximately 8 demonstrated recently by Rowe and co-workers may be achieved. However, we also show that this amplification cannot be used to realize high sensitivity sensor devices due to limitation of the applied voltage across the device when the transfer resistance is smaller than the total resistance of the device. In that case, the sensitivity in units of V V−1 Pa−1 is always less than the sensitivity of conventional piezoresistors fabricated in the same piezoresistive material. ©2008 American Institute of Physics

U2 - 10.1063/1.3033558

DO - 10.1063/1.3033558

M3 - Journal article

VL - 104

SP - 114510

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

ER -