Germanium arsenide nanosheets applied as twodimensional field emitters

F. Giubileo*, A. Grillo, A. Pelella, E. Faella, L. Camilli, J. B. Sun, D. Capista, M. Passacantando, A. Di Bartolomeo

*Corresponding author for this work

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Abstract

The IV-V groups binary compound germanium arsenide (GeAs) is a semiconductor that can be easily exfoliated in very thin nanosheets and is characterized by a band gap ranging from 0.6 eV (bulk form) up to 2.1 eV (monolayer). We investigate the field emission characteristics of exfoliated multilayer GeAs nanosheets by means of a tip-anode setup, where a nanomanipulated W-tip is positioned in front of the GeAs emitting layer at nanometric distance, all controlled inside a scanning electron microscope. We demonstrate that GeAs multilayers are suitable to develop electron sources, with turn-on field of the order of 102Vμm-1, and field enhancement factor of about 70.

Original languageEnglish
Article number012021
Book seriesJournal of Physics: Conference Series
Volume2047
Issue number1
Number of pages6
ISSN1742-6588
DOIs
Publication statusPublished - 2021
Event4th International Conference on Material Strength and Applied Mechanics - Virtual event, Macau, China
Duration: 16 Aug 202118 Aug 2021
Conference number: 4

Conference

Conference4th International Conference on Material Strength and Applied Mechanics
Number4
LocationVirtual event
Country/TerritoryChina
CityMacau
Period16/08/202118/08/2021

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