Germanium arsenide nanosheets applied as twodimensional field emitters

F. Giubileo; A. Grillo; A. Pelella; E. Faella; L. Camilli; J. B. Sun; D. Capista; M. Passacantando; A. Di Bartolomeo

doi:10.1088/1742-6596/2047/1/012021

Germanium arsenide nanosheets applied as twodimensional field emitters

F. Giubileo^*, A. Grillo, A. Pelella, E. Faella, L. Camilli, J. B. Sun, D. Capista, M. Passacantando, A. Di Bartolomeo

^*Corresponding author for this work

Department of Physics

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Abstract

The IV-V groups binary compound germanium arsenide (GeAs) is a semiconductor that can be easily exfoliated in very thin nanosheets and is characterized by a band gap ranging from 0.6 eV (bulk form) up to 2.1 eV (monolayer). We investigate the field emission characteristics of exfoliated multilayer GeAs nanosheets by means of a tip-anode setup, where a nanomanipulated W-tip is positioned in front of the GeAs emitting layer at nanometric distance, all controlled inside a scanning electron microscope. We demonstrate that GeAs multilayers are suitable to develop electron sources, with turn-on field of the order of 10²Vμm^-1, and field enhancement factor of about 70.

Original language	English
Article number	012021
Book series	Journal of Physics: Conference Series
Volume	2047
Issue number	1
Number of pages	6
ISSN	1742-6588
DOIs	https://doi.org/10.1088/1742-6596/2047/1/012021
Publication status	Published - 2021
Event	4th International Conference on Material Strength and Applied Mechanics - Virtual event, Macau, China Duration: 16 Aug 2021 → 18 Aug 2021 Conference number: 4

Conference

Conference	4th International Conference on Material Strength and Applied Mechanics
Number	4
Location	Virtual event
Country/Territory	China
City	Macau
Period	16/08/2021 → 18/08/2021

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title = "Germanium arsenide nanosheets applied as twodimensional field emitters",

abstract = "The IV-V groups binary compound germanium arsenide (GeAs) is a semiconductor that can be easily exfoliated in very thin nanosheets and is characterized by a band gap ranging from 0.6 eV (bulk form) up to 2.1 eV (monolayer). We investigate the field emission characteristics of exfoliated multilayer GeAs nanosheets by means of a tip-anode setup, where a nanomanipulated W-tip is positioned in front of the GeAs emitting layer at nanometric distance, all controlled inside a scanning electron microscope. We demonstrate that GeAs multilayers are suitable to develop electron sources, with turn-on field of the order of 102Vμm-1, and field enhancement factor of about 70.",

author = "F. Giubileo and A. Grillo and A. Pelella and E. Faella and L. Camilli and Sun, {J. B.} and D. Capista and M. Passacantando and {Di Bartolomeo}, A.",

note = "Publisher Copyright: {\textcopyright} 2021 Institute of Physics Publishing. All rights reserved.; 4th International Conference on Material Strength and Applied Mechanics, MSAM 2021 ; Conference date: 16-08-2021 Through 18-08-2021",

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T1 - Germanium arsenide nanosheets applied as twodimensional field emitters

AU - Giubileo, F.

AU - Grillo, A.

AU - Pelella, A.

AU - Faella, E.

AU - Camilli, L.

AU - Sun, J. B.

AU - Capista, D.

AU - Passacantando, M.

AU - Di Bartolomeo, A.

N1 - Conference code: 4

PY - 2021

Y1 - 2021

N2 - The IV-V groups binary compound germanium arsenide (GeAs) is a semiconductor that can be easily exfoliated in very thin nanosheets and is characterized by a band gap ranging from 0.6 eV (bulk form) up to 2.1 eV (monolayer). We investigate the field emission characteristics of exfoliated multilayer GeAs nanosheets by means of a tip-anode setup, where a nanomanipulated W-tip is positioned in front of the GeAs emitting layer at nanometric distance, all controlled inside a scanning electron microscope. We demonstrate that GeAs multilayers are suitable to develop electron sources, with turn-on field of the order of 102Vμm-1, and field enhancement factor of about 70.

AB - The IV-V groups binary compound germanium arsenide (GeAs) is a semiconductor that can be easily exfoliated in very thin nanosheets and is characterized by a band gap ranging from 0.6 eV (bulk form) up to 2.1 eV (monolayer). We investigate the field emission characteristics of exfoliated multilayer GeAs nanosheets by means of a tip-anode setup, where a nanomanipulated W-tip is positioned in front of the GeAs emitting layer at nanometric distance, all controlled inside a scanning electron microscope. We demonstrate that GeAs multilayers are suitable to develop electron sources, with turn-on field of the order of 102Vμm-1, and field enhancement factor of about 70.

U2 - 10.1088/1742-6596/2047/1/012021

DO - 10.1088/1742-6596/2047/1/012021

M3 - Conference article

AN - SCOPUS:85119261518

SN - 1742-6588

VL - 2047

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012021

T2 - 4th International Conference on Material Strength and Applied Mechanics

Y2 - 16 August 2021 through 18 August 2021

ER -

Germanium arsenide nanosheets applied as twodimensional field emitters

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