Geometrical control of 3C and 6H-SiC nucleation on low off-axis substrates

Valdas Jokubavicius; Rickard Liljedahl; Yiyu Ou; Haiyan Ou; Satoshi kamiyama; Rositza Yakimova; Mikael Syväjärvi

doi:10.4028/www.scientific.net/MSF.679-680.103

Geometrical control of 3C and 6H-SiC nucleation on low off-axis substrates

Valdas Jokubavicius, Rickard Liljedahl, Yiyu Ou, Haiyan Ou, Satoshi kamiyama, Rositza Yakimova, Mikael Syväjärvi

Linköping University

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Growth of 3C or 6H-SiC epilayers on low off-axis 6H-SiC substrates can be mastered by changing the size of the on axis plane formed by long terraces in the epilayer using geometrical control. The desired polytype can be selected in thick (~200 μm) layers of both 6H-SiC and 3C-SiC polytypes on substrates with off-orientation as low as 1.4 and 2 degrees. The resultant crystal quality of the 3C and the 6H-SiC epilayers, grown under the same process parameters, deteriorates when lowering the off-orientation of the substrate.

Original language	English
Journal	Materials Science Forum
Volume	679-680
Pages (from-to)	103-106
ISSN	0255-5476
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.679-680.103
Publication status	Published - 2011

Keywords

Sublimation Epitaxy
6H-SiC
3C-SiC
Geometrical Control

Access to Document

10.4028/www.scientific.net/MSF.679-680.103

http://www.scientific.net.globalproxy.cvt.dk/MSF.679-680.103

OpenUrl availability

Full text

Cite this

@article{52ec834907024decafbf8dd77d9b21cb,

title = "Geometrical control of 3C and 6H-SiC nucleation on low off-axis substrates",

abstract = "Growth of 3C or 6H-SiC epilayers on low off-axis 6H-SiC substrates can be mastered by changing the size of the on axis plane formed by long terraces in the epilayer using geometrical control. The desired polytype can be selected in thick (~200 μm) layers of both 6H-SiC and 3C-SiC polytypes on substrates with off-orientation as low as 1.4 and 2 degrees. The resultant crystal quality of the 3C and the 6H-SiC epilayers, grown under the same process parameters, deteriorates when lowering the off-orientation of the substrate.",

keywords = "Sublimation Epitaxy, 6H-SiC, 3C-SiC, Geometrical Control",

author = "Valdas Jokubavicius and Rickard Liljedahl and Yiyu Ou and Haiyan Ou and Satoshi kamiyama and Rositza Yakimova and Mikael Syv{\"a}j{\"a}rvi",

year = "2011",

doi = "10.4028/www.scientific.net/MSF.679-680.103",

language = "English",

volume = "679-680",

pages = "103--106",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Scientific.Net",

}

TY - JOUR

T1 - Geometrical control of 3C and 6H-SiC nucleation on low off-axis substrates

AU - Jokubavicius, Valdas

AU - Liljedahl, Rickard

AU - Ou, Yiyu

AU - Ou, Haiyan

AU - kamiyama, Satoshi

AU - Yakimova, Rositza

AU - Syväjärvi, Mikael

PY - 2011

Y1 - 2011

N2 - Growth of 3C or 6H-SiC epilayers on low off-axis 6H-SiC substrates can be mastered by changing the size of the on axis plane formed by long terraces in the epilayer using geometrical control. The desired polytype can be selected in thick (~200 μm) layers of both 6H-SiC and 3C-SiC polytypes on substrates with off-orientation as low as 1.4 and 2 degrees. The resultant crystal quality of the 3C and the 6H-SiC epilayers, grown under the same process parameters, deteriorates when lowering the off-orientation of the substrate.

AB - Growth of 3C or 6H-SiC epilayers on low off-axis 6H-SiC substrates can be mastered by changing the size of the on axis plane formed by long terraces in the epilayer using geometrical control. The desired polytype can be selected in thick (~200 μm) layers of both 6H-SiC and 3C-SiC polytypes on substrates with off-orientation as low as 1.4 and 2 degrees. The resultant crystal quality of the 3C and the 6H-SiC epilayers, grown under the same process parameters, deteriorates when lowering the off-orientation of the substrate.

KW - Sublimation Epitaxy

KW - 6H-SiC

KW - 3C-SiC

KW - Geometrical Control

U2 - 10.4028/www.scientific.net/MSF.679-680.103

DO - 10.4028/www.scientific.net/MSF.679-680.103

M3 - Journal article

SN - 0255-5476

VL - 679-680

SP - 103

EP - 106

JO - Materials Science Forum

JF - Materials Science Forum

ER -

Geometrical control of 3C and 6H-SiC nucleation on low off-axis substrates

Abstract

Keywords

Access to Document

OpenUrl availability

Fingerprint

Cite this