Ge-nanoclusters were formed by electron-beam irradiation in Ge-doped silica-on-silicon thin films. The size and density of the clusters can be controlled by the irradiation intensity and time.

Haiyan Ou, Troels Peter Rørdam, Karsten Rottwitt, Flemming Bjerg Grumsen, Andy Horsewell

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Ge-nanoclusters were formed by electron-beam irradiation in Ge-doped silica-on-silicon thin films. The size and density of the clusters can be controlled by the irradiation intensity and time.
Original languageEnglish
JournalElectronics letters
Volume42
Issue number9
Pages (from-to)532-534
ISSN0013-5194
DOIs
Publication statusPublished - 2006

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