Ge nanoclusters in PECVD-deposited glass after heat treating and electron irradiation

Haiyan Ou; Troels Peter Rørdam; Karsten Rottwitt; Flemming Bjerg Grumsen; Andy Horsewell; Rolf W. Berg

doi:10.1007/s00340-007-2594-x

Ge nanoclusters in PECVD-deposited glass after heat treating and electron irradiation

Haiyan Ou, Troels Peter Rørdam, Karsten Rottwitt, Flemming Bjerg Grumsen, Andy Horsewell, Rolf W. Berg

Department of Chemistry

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

This paper reports the formation of Ge nanoclusters in silica glass thin films deposited by plasma-enhanced chemical vapor deposition (PECVD). We studied the samples by transmission electron microscopy (TEM) and Raman spectroscopy after annealing. TEM investigation shows that the Ge nanoclusters at two areaswere formed by different mechanisms. The Ge nanoclusters formed in a single row along the interface of a silicon substrate and the silica glass film by annealing during high-temperature heat treatment. Ge nanoclusters did not initially form in the bulk of the film but could be subsequently formed by the electron-beam irradiation. The interface between the silicon substrate and the silica glass film was investigated by Raman spectroscopy. The shift of the Raman peaks around 286.8 cm−1 and 495 cm−1 suggests that the interface is a Si1−xGex alloy film and that the composition x varies along the film growth direction.

Original language	English
Journal	Applied Physics B
Volume	87
Issue number	2
Pages (from-to)	327-331
ISSN	0946-2171
DOIs	https://doi.org/10.1007/s00340-007-2594-x
Publication status	Published - 2007

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title = "Ge nanoclusters in PECVD-deposited glass after heat treating and electron irradiation",

abstract = "This paper reports the formation of Ge nanoclusters in silica glass thin films deposited by plasma-enhanced chemical vapor deposition (PECVD). We studied the samples by transmission electron microscopy (TEM) and Raman spectroscopy after annealing. TEM investigation shows that the Ge nanoclusters at two areaswere formed by different mechanisms. The Ge nanoclusters formed in a single row along the interface of a silicon substrate and the silica glass film by annealing during high-temperature heat treatment. Ge nanoclusters did not initially form in the bulk of the film but could be subsequently formed by the electron-beam irradiation. The interface between the silicon substrate and the silica glass film was investigated by Raman spectroscopy. The shift of the Raman peaks around 286.8 cm−1 and 495 cm−1 suggests that the interface is a Si1−xGex alloy film and that the composition x varies along the film growth direction.",

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T1 - Ge nanoclusters in PECVD-deposited glass after heat treating and electron irradiation

AU - Ou, Haiyan

AU - Rørdam, Troels Peter

AU - Rottwitt, Karsten

AU - Grumsen, Flemming Bjerg

AU - Horsewell, Andy

AU - Berg, Rolf W.

PY - 2007

Y1 - 2007

N2 - This paper reports the formation of Ge nanoclusters in silica glass thin films deposited by plasma-enhanced chemical vapor deposition (PECVD). We studied the samples by transmission electron microscopy (TEM) and Raman spectroscopy after annealing. TEM investigation shows that the Ge nanoclusters at two areaswere formed by different mechanisms. The Ge nanoclusters formed in a single row along the interface of a silicon substrate and the silica glass film by annealing during high-temperature heat treatment. Ge nanoclusters did not initially form in the bulk of the film but could be subsequently formed by the electron-beam irradiation. The interface between the silicon substrate and the silica glass film was investigated by Raman spectroscopy. The shift of the Raman peaks around 286.8 cm−1 and 495 cm−1 suggests that the interface is a Si1−xGex alloy film and that the composition x varies along the film growth direction.

AB - This paper reports the formation of Ge nanoclusters in silica glass thin films deposited by plasma-enhanced chemical vapor deposition (PECVD). We studied the samples by transmission electron microscopy (TEM) and Raman spectroscopy after annealing. TEM investigation shows that the Ge nanoclusters at two areaswere formed by different mechanisms. The Ge nanoclusters formed in a single row along the interface of a silicon substrate and the silica glass film by annealing during high-temperature heat treatment. Ge nanoclusters did not initially form in the bulk of the film but could be subsequently formed by the electron-beam irradiation. The interface between the silicon substrate and the silica glass film was investigated by Raman spectroscopy. The shift of the Raman peaks around 286.8 cm−1 and 495 cm−1 suggests that the interface is a Si1−xGex alloy film and that the composition x varies along the film growth direction.

U2 - 10.1007/s00340-007-2594-x

DO - 10.1007/s00340-007-2594-x

M3 - Journal article

SN - 0946-2171

VL - 87

SP - 327

EP - 331

JO - Applied Physics B

JF - Applied Physics B

IS - 2

ER -

Ge nanoclusters in PECVD-deposited glass after heat treating and electron irradiation

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