Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings.

Research output: Contribution to journalJournal article – Annual report year: 2014Researchpeer-review

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Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings. / Lu, Weifang; Li, Cheng; Lin, Guangyang; Wang, Chen ; Huang, Shihao; Wei, Jiangbin; Lan, Xiaoling; Chen, Songyan; Ou, Haiyan.

In: Materials Research Express, Vol. 2, 15009, 2015.

Research output: Contribution to journalJournal article – Annual report year: 2014Researchpeer-review

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Lu, Weifang ; Li, Cheng ; Lin, Guangyang ; Wang, Chen ; Huang, Shihao ; Wei, Jiangbin ; Lan, Xiaoling ; Chen, Songyan ; Ou, Haiyan. / Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings. In: Materials Research Express. 2015 ; Vol. 2.

Bibtex

@article{1caf001d60a7475994a97b3a62edcaee,
title = "Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings.",
abstract = "Curled Ge nanobelts were fabricated by secondary oxidation of self-assembly SiGe rings, which were exfoliated from the SiGe stripes on the insulator. The Ge-rich SiGe stripes on insulator were formed by hololithography and modified Ge condensation processes of Si0.82Ge0.18 on SOI substrate. Ge nanobelts under a residual compressive strain of 2{\%} were achieved, and the strain should be higher before partly releasing through bulge islands and breakage of the curled Ge nanobelts during the secondary oxidation process. The primary factor leading to compressive strain is thermal shrinkage of Ge nanobelts, which extrudes to Ge nanobelts in radial and tangent directions during the cooling process. This technique is promising for application in high-mobility Ge nano-scale transistors",
keywords = "Self-assembly, SiGe ring, Oxidation, Compressive strain",
author = "Weifang Lu and Cheng Li and Guangyang Lin and Chen Wang and Shihao Huang and Jiangbin Wei and Xiaoling Lan and Songyan Chen and Haiyan Ou",
year = "2015",
doi = "10.1088/2053-1591/2/1/015009",
language = "English",
volume = "2",
journal = "Materials Research Express",
issn = "2053-1591",
publisher = "IOP Publishing",

}

RIS

TY - JOUR

T1 - Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings.

AU - Lu, Weifang

AU - Li, Cheng

AU - Lin, Guangyang

AU - Wang, Chen

AU - Huang, Shihao

AU - Wei, Jiangbin

AU - Lan, Xiaoling

AU - Chen, Songyan

AU - Ou, Haiyan

PY - 2015

Y1 - 2015

N2 - Curled Ge nanobelts were fabricated by secondary oxidation of self-assembly SiGe rings, which were exfoliated from the SiGe stripes on the insulator. The Ge-rich SiGe stripes on insulator were formed by hololithography and modified Ge condensation processes of Si0.82Ge0.18 on SOI substrate. Ge nanobelts under a residual compressive strain of 2% were achieved, and the strain should be higher before partly releasing through bulge islands and breakage of the curled Ge nanobelts during the secondary oxidation process. The primary factor leading to compressive strain is thermal shrinkage of Ge nanobelts, which extrudes to Ge nanobelts in radial and tangent directions during the cooling process. This technique is promising for application in high-mobility Ge nano-scale transistors

AB - Curled Ge nanobelts were fabricated by secondary oxidation of self-assembly SiGe rings, which were exfoliated from the SiGe stripes on the insulator. The Ge-rich SiGe stripes on insulator were formed by hololithography and modified Ge condensation processes of Si0.82Ge0.18 on SOI substrate. Ge nanobelts under a residual compressive strain of 2% were achieved, and the strain should be higher before partly releasing through bulge islands and breakage of the curled Ge nanobelts during the secondary oxidation process. The primary factor leading to compressive strain is thermal shrinkage of Ge nanobelts, which extrudes to Ge nanobelts in radial and tangent directions during the cooling process. This technique is promising for application in high-mobility Ge nano-scale transistors

KW - Self-assembly

KW - SiGe ring

KW - Oxidation

KW - Compressive strain

U2 - 10.1088/2053-1591/2/1/015009

DO - 10.1088/2053-1591/2/1/015009

M3 - Journal article

VL - 2

JO - Materials Research Express

JF - Materials Research Express

SN - 2053-1591

M1 - 15009

ER -