Abstract
| Original language | English |
|---|---|
| Article number | 125134 |
| Journal | Physical Review B (Condensed Matter and Materials Physics) |
| Volume | 100 |
| Issue number | 12 |
| Number of pages | 8 |
| ISSN | 1098-0121 |
| DOIs | |
| Publication status | Published - 2019 |
Cite this
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Gate-tunable Rashba spin-orbit coupling and spin polarization at diluted oxide interfaces. / Gan, Yulin; Zhang, Yu; Christensen, Dennis Valbjørn; Pryds, Nini; Chen, Yunzhong.
In: Physical Review B (Condensed Matter and Materials Physics), Vol. 100, No. 12, 125134, 2019.Research output: Contribution to journal › Journal article › Research › peer-review
TY - JOUR
T1 - Gate-tunable Rashba spin-orbit coupling and spin polarization at diluted oxide interfaces
AU - Gan, Yulin
AU - Zhang, Yu
AU - Christensen, Dennis Valbjørn
AU - Pryds, Nini
AU - Chen, Yunzhong
PY - 2019
Y1 - 2019
N2 - A diluted oxide interface of LaAl1−xMnxO/SrTiO3 (LAMO/STO) provides a new way of tuning the ground states of the interface between the two band insulators of LAO and STO from metallic/superconducting to highly insulating. Increasing the Mn doping level (x) leads to a delicate control of the carrier density as well as a raise in the electron mobility and spin polarization. Herein, we demonstrate a tunable Rashba spin-orbit coupling (SOC) and spin polarization of LAMO/STO (0.2≤x≤0.3) by applying a back gate. The presence of SOC causes splitting of the energy band into two branches by a spin splitting energy. The maximum spin splitting energy depends on the Mn doping and decreases with the increasing Mn content and then vanishes at x=0.3. The carrier density dependence of the spin splitting energy for different compositions shows a dome-shaped behavior with a maximum at different normalized carrier densities. These findings have not yet been observed in LAO/STO interfaces. A fully back-gate-tunable spin-polarized two-dimensional electron liquid is observed at the interface with x=0.3 where only dxy orbits are populated (5.3×1012cm−2≤ns≤1.0×1013cm−2). The present results shed light on unexplored territory in SOC at STO-based oxide heterostructures and make LAMO/STO an intriguing platform for spin-related phenomena in 3d electron systems.
AB - A diluted oxide interface of LaAl1−xMnxO/SrTiO3 (LAMO/STO) provides a new way of tuning the ground states of the interface between the two band insulators of LAO and STO from metallic/superconducting to highly insulating. Increasing the Mn doping level (x) leads to a delicate control of the carrier density as well as a raise in the electron mobility and spin polarization. Herein, we demonstrate a tunable Rashba spin-orbit coupling (SOC) and spin polarization of LAMO/STO (0.2≤x≤0.3) by applying a back gate. The presence of SOC causes splitting of the energy band into two branches by a spin splitting energy. The maximum spin splitting energy depends on the Mn doping and decreases with the increasing Mn content and then vanishes at x=0.3. The carrier density dependence of the spin splitting energy for different compositions shows a dome-shaped behavior with a maximum at different normalized carrier densities. These findings have not yet been observed in LAO/STO interfaces. A fully back-gate-tunable spin-polarized two-dimensional electron liquid is observed at the interface with x=0.3 where only dxy orbits are populated (5.3×1012cm−2≤ns≤1.0×1013cm−2). The present results shed light on unexplored territory in SOC at STO-based oxide heterostructures and make LAMO/STO an intriguing platform for spin-related phenomena in 3d electron systems.
U2 - 10.1103/PhysRevB.100.125134
DO - 10.1103/PhysRevB.100.125134
M3 - Journal article
VL - 100
JO - Physical Review B (Condensed Matter and Materials Physics)
JF - Physical Review B (Condensed Matter and Materials Physics)
SN - 1098-0121
IS - 12
M1 - 125134
ER -