GaP Nanowire Betavoltaic Device

Simon McNamee, Devan Wagner, Elisabetta Maria Fiordaliso, Dave Novog, Ray R. LaPierre*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

A betavoltaic device is reported that directly converts beta energy from a 63Ni radioisotope into electrical energy by impact ionization in a GaP nanowire array. The GaP nanowires are grown in a periodic array by molecular beam epitaxy on silicon using the self-assisted vapor-liquid-solid method. By growing GaP nanowires with large packing fraction and length on the order of the maximum beta range, the nanowires can efficiently capture the betas with high energy conversion efficiency while using inexpensive Si substrates. Monte Carlo simulations predict a betavoltaic efficiency in agreement with experimental results. The nanowire betavoltaic device can be used as a power source for nano-/micro-systems such as mobile electronic devices, implantable medical devices, and wireless sensor networks.
Original languageEnglish
Article number075401
JournalNanotechnology
Volume30
Issue number7
Number of pages7
ISSN0957-4484
DOIs
Publication statusPublished - 2019

Keywords

  • Betavoltaic
  • Gallium phosphide
  • Nanowire

Cite this

McNamee, S., Wagner, D., Fiordaliso, E. M., Novog, D., & LaPierre, R. R. (2019). GaP Nanowire Betavoltaic Device. Nanotechnology, 30(7), [075401]. https://doi.org/10.1088/1361-6528/aaf30a