GaN Power Stage for Switch-mode Audio Amplification

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedings – Annual report year: 2015Researchpeer-review

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Gallium Nitride (GaN) based power transistors are gaining more and more attention since the introduction of the enhancement mode eGaN Field Effect Transistor (FET) which makes an adaptation from Metal-Oxide Semiconductor (MOSFET) to eGaN based technology less complex than by using depletion mode GaN FETs. This project seeks to investigate the possibilities of using eGaN FETs as the power switching device in a full bridge power stage intended for switch mode audio amplification. A 50 W 1 MHz power stage was built and provided promising audio performance. Future work includes optimization of dead time and investigation of switching frequency versus audio performance.
Original languageEnglish
Title of host publicationProceedings of 138th AES Convention
Number of pages9
PublisherAudio Engineering Society
Publication date2015
Article number9273
Publication statusPublished - 2015
Event138th International Audio Engineering Society (AES) Convention - Warsaw, Poland
Duration: 7 May 201510 May 2015

Conference

Conference138th International Audio Engineering Society (AES) Convention
CountryPoland
CityWarsaw
Period07/05/201510/05/2015

ID: 110935429