Abstract
Gallium Nitride (GaN) based power transistors are gaining more and more attention since the introduction
of the enhancement mode eGaN Field Effect Transistor (FET) which makes an adaptation from Metal-Oxide
Semiconductor (MOSFET) to eGaN based technology less complex than by using depletion mode GaN FETs.
This project seeks to investigate the possibilities of using eGaN FETs as the power switching device in a full
bridge power stage intended for switch mode audio amplification. A 50 W 1 MHz power stage was built and
provided promising audio performance. Future work includes optimization of dead time and investigation of
switching frequency versus audio performance.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of 138th AES Convention |
| Number of pages | 9 |
| Publisher | Audio Engineering Society |
| Publication date | 2015 |
| Article number | 9273 |
| Publication status | Published - 2015 |
| Event | 138th International Audio Engineering Society (AES) Convention - Warsaw, Poland Duration: 7 May 2015 → 10 May 2015 |
Conference
| Conference | 138th International Audio Engineering Society (AES) Convention |
|---|---|
| Country | Poland |
| City | Warsaw |
| Period | 07/05/2015 → 10/05/2015 |
Cite this
Ploug, R. O., Knott, A., & Poulsen, S. B. (2015). GaN Power Stage for Switch-mode Audio Amplification. In Proceedings of 138th AES Convention [9273] Audio Engineering Society.