GaN Power Stage for Switch-mode Audio Amplification

Rasmus Overgaard Ploug, Arnold Knott, Søren Bang Poulsen

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    Gallium Nitride (GaN) based power transistors are gaining more and more attention since the introduction of the enhancement mode eGaN Field Effect Transistor (FET) which makes an adaptation from Metal-Oxide Semiconductor (MOSFET) to eGaN based technology less complex than by using depletion mode GaN FETs. This project seeks to investigate the possibilities of using eGaN FETs as the power switching device in a full bridge power stage intended for switch mode audio amplification. A 50 W 1 MHz power stage was built and provided promising audio performance. Future work includes optimization of dead time and investigation of switching frequency versus audio performance.
    Original languageEnglish
    Title of host publicationProceedings of 138th AES Convention
    Number of pages9
    PublisherAudio Engineering Society
    Publication date2015
    Article number9273
    Publication statusPublished - 2015
    Event138th Audio Engineering Society Convention - Warsaw, Poland
    Duration: 7 May 201510 May 2015
    Conference number: 138

    Conference

    Conference138th Audio Engineering Society Convention
    Number138
    Country/TerritoryPoland
    CityWarsaw
    Period07/05/201510/05/2015

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