GaAs-on-insulator ridge waveguide nanobeam cavities with integrated InAs quantum dots

Yueguang Zhou; Yuhui Yang; Yujing Wang; Aris Koulas-Simos; Chirag C Palekar; Imad Limame; Shulun Li; Hanqing Liu; Haiqiao Ni; Zhichuan Niu; Kresten Yvind; Niels Gregersen; Minhao Pu; Stephan Reitzenstein

doi:10.1088/2633-4356/ad5823

GaAs-on-insulator ridge waveguide nanobeam cavities with integrated InAs quantum dots

Yueguang Zhou, Yuhui Yang, Yujing Wang, Aris Koulas-Simos, Chirag C Palekar, Imad Limame, Shulun Li, Hanqing Liu, Haiqiao Ni, Zhichuan Niu, Kresten Yvind, Niels Gregersen, Minhao Pu, Stephan Reitzenstein^*

^*Corresponding author for this work

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Abstract

This study investigates nanobeam cavities on a GaAs-on-insulator (GaAsOI) chip with InAs quantum dots (QDs), including design, fabrication, and experimental characterization. The nanobeam cavities are optimized for high photon coupling efficiency and pronounced light-matter interaction. Numerical studies yield Q factors up to about 1400, a coupling efficiency of nearly 70 % and a maximum Purcell factor of approximately 100. Experimentally, these devices have a Q factor of about 1300, and comparing the lifetime of QDs in on-resonance and off-resonance conditions, a Purcell factor of 10.46 ± 0.14 is obtained. Moreover, in the single-emitter regime, we observe strong multiphoton suppression with g ( 2 ) ( 0 ) = 0.297 . Our results demonstrate the high potential of nanobeam cavities on a GaAsOI platform for quantum photonic applications.

Original language	English
Article number	025403
Journal	Materials for Quantum Technology
Volume	4
Issue number	2
Number of pages	10
ISSN	2633-4356
DOIs	https://doi.org/10.1088/2633-4356/ad5823
Publication status	Published - 1 Jun 2024

Keywords

Integrated quantum photonic circuit
Nanobeam cavity
Quantum dot
Single-photon emitter
Waveguide

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10.1088/2633-4356/ad5823

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@article{c47ac7d9bdbd4ea8bc2e1bbd5207b84b,

title = "GaAs-on-insulator ridge waveguide nanobeam cavities with integrated InAs quantum dots",

abstract = "This study investigates nanobeam cavities on a GaAs-on-insulator (GaAsOI) chip with InAs quantum dots (QDs), including design, fabrication, and experimental characterization. The nanobeam cavities are optimized for high photon coupling efficiency and pronounced light-matter interaction. Numerical studies yield Q factors up to about 1400, a coupling efficiency of nearly 70 % and a maximum Purcell factor of approximately 100. Experimentally, these devices have a Q factor of about 1300, and comparing the lifetime of QDs in on-resonance and off-resonance conditions, a Purcell factor of 10.46 ± 0.14 is obtained. Moreover, in the single-emitter regime, we observe strong multiphoton suppression with g ( 2 ) ( 0 ) = 0.297 . Our results demonstrate the high potential of nanobeam cavities on a GaAsOI platform for quantum photonic applications.",

keywords = "Integrated quantum photonic circuit, Nanobeam cavity, Quantum dot, Single-photon emitter, Waveguide",

author = "Yueguang Zhou and Yuhui Yang and Yujing Wang and Aris Koulas-Simos and {C Palekar}, Chirag and Imad Limame and Shulun Li and Hanqing Liu and Haiqiao Ni and Zhichuan Niu and Kresten Yvind and Niels Gregersen and Minhao Pu and Stephan Reitzenstein",

note = "Publisher Copyright: {\textcopyright} 2024 The Author(s). Published by IOP Publishing Ltd.",

year = "2024",

month = jun,

day = "1",

doi = "10.1088/2633-4356/ad5823",

language = "English",

volume = "4",

journal = "Materials for Quantum Technology",

issn = "2633-4356",

publisher = "IOP Publishing",

number = "2",

}

TY - JOUR

T1 - GaAs-on-insulator ridge waveguide nanobeam cavities with integrated InAs quantum dots

AU - Zhou, Yueguang

AU - Yang, Yuhui

AU - Wang, Yujing

AU - Koulas-Simos, Aris

AU - C Palekar, Chirag

AU - Limame, Imad

AU - Li, Shulun

AU - Liu, Hanqing

AU - Ni, Haiqiao

AU - Niu, Zhichuan

AU - Yvind, Kresten

AU - Gregersen, Niels

AU - Pu, Minhao

AU - Reitzenstein, Stephan

PY - 2024/6/1

Y1 - 2024/6/1

N2 - This study investigates nanobeam cavities on a GaAs-on-insulator (GaAsOI) chip with InAs quantum dots (QDs), including design, fabrication, and experimental characterization. The nanobeam cavities are optimized for high photon coupling efficiency and pronounced light-matter interaction. Numerical studies yield Q factors up to about 1400, a coupling efficiency of nearly 70 % and a maximum Purcell factor of approximately 100. Experimentally, these devices have a Q factor of about 1300, and comparing the lifetime of QDs in on-resonance and off-resonance conditions, a Purcell factor of 10.46 ± 0.14 is obtained. Moreover, in the single-emitter regime, we observe strong multiphoton suppression with g ( 2 ) ( 0 ) = 0.297 . Our results demonstrate the high potential of nanobeam cavities on a GaAsOI platform for quantum photonic applications.

AB - This study investigates nanobeam cavities on a GaAs-on-insulator (GaAsOI) chip with InAs quantum dots (QDs), including design, fabrication, and experimental characterization. The nanobeam cavities are optimized for high photon coupling efficiency and pronounced light-matter interaction. Numerical studies yield Q factors up to about 1400, a coupling efficiency of nearly 70 % and a maximum Purcell factor of approximately 100. Experimentally, these devices have a Q factor of about 1300, and comparing the lifetime of QDs in on-resonance and off-resonance conditions, a Purcell factor of 10.46 ± 0.14 is obtained. Moreover, in the single-emitter regime, we observe strong multiphoton suppression with g ( 2 ) ( 0 ) = 0.297 . Our results demonstrate the high potential of nanobeam cavities on a GaAsOI platform for quantum photonic applications.

KW - Integrated quantum photonic circuit

KW - Nanobeam cavity

KW - Quantum dot

KW - Single-photon emitter

KW - Waveguide

U2 - 10.1088/2633-4356/ad5823

DO - 10.1088/2633-4356/ad5823

M3 - Journal article

AN - SCOPUS:85197424387

SN - 2633-4356

VL - 4

JO - Materials for Quantum Technology

JF - Materials for Quantum Technology

IS - 2

M1 - 025403

ER -

GaAs-on-insulator ridge waveguide nanobeam cavities with integrated InAs quantum dots

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