Fusion bonding of Si wafers investigated by x ray diffraction

Steen Weichel; Francois Grey; Kurt Rasmussen; Mourits Nielsen; Robert Krarup Feidenhans'l; Paul Howes; J. Vedde

doi:10.1063/1.125659

Fusion bonding of Si wafers investigated by x ray diffraction

Steen Weichel, Francois Grey, Kurt Rasmussen, Mourits Nielsen, Robert Krarup Feidenhans'l, Paul Howes, J. Vedde

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Abstract

The interface structure of bonded Si(001) wafers with twist angle 6.5 degrees is studied as a function of annealing temperature. An ordered structure is observed in x-ray diffraction by monitoring a satellite reflection due to the periodic modulation near the interface, which results from the formation of a regular array of screw dislocations. This satellite reflection first appears at an annealing temperature of 800 degrees C, and increases abruptly up to temperatures of 1000 degrees C. We propose that this transition occurs when there is sufficient mobility for the reorganization of atomic steps and terraces in the interface region. (C) 2000 American Institute of Physics.

Original language	English
Journal	Applied Physics Letters
Volume	76
Issue number	1
Pages (from-to)	70-72
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.125659
Publication status	Published - 2000

Bibliographical note

Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

DIFFUSION
SILICON
SCANNING-TUNNELING-MICROSCOPY
SI(001)

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abstract = "The interface structure of bonded Si(001) wafers with twist angle 6.5 degrees is studied as a function of annealing temperature. An ordered structure is observed in x-ray diffraction by monitoring a satellite reflection due to the periodic modulation near the interface, which results from the formation of a regular array of screw dislocations. This satellite reflection first appears at an annealing temperature of 800 degrees C, and increases abruptly up to temperatures of 1000 degrees C. We propose that this transition occurs when there is sufficient mobility for the reorganization of atomic steps and terraces in the interface region. (C) 2000 American Institute of Physics.",

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note = "Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",

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AU - Weichel, Steen

AU - Grey, Francois

AU - Rasmussen, Kurt

AU - Nielsen, Mourits

AU - Feidenhans'l, Robert Krarup

AU - Howes, Paul

AU - Vedde, J.

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N2 - The interface structure of bonded Si(001) wafers with twist angle 6.5 degrees is studied as a function of annealing temperature. An ordered structure is observed in x-ray diffraction by monitoring a satellite reflection due to the periodic modulation near the interface, which results from the formation of a regular array of screw dislocations. This satellite reflection first appears at an annealing temperature of 800 degrees C, and increases abruptly up to temperatures of 1000 degrees C. We propose that this transition occurs when there is sufficient mobility for the reorganization of atomic steps and terraces in the interface region. (C) 2000 American Institute of Physics.

AB - The interface structure of bonded Si(001) wafers with twist angle 6.5 degrees is studied as a function of annealing temperature. An ordered structure is observed in x-ray diffraction by monitoring a satellite reflection due to the periodic modulation near the interface, which results from the formation of a regular array of screw dislocations. This satellite reflection first appears at an annealing temperature of 800 degrees C, and increases abruptly up to temperatures of 1000 degrees C. We propose that this transition occurs when there is sufficient mobility for the reorganization of atomic steps and terraces in the interface region. (C) 2000 American Institute of Physics.

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Fusion bonding of Si wafers investigated by x ray diffraction

Abstract

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