Fusion bonding of Si wafers investigated by x ray diffraction

Steen Weichel, Francois Grey, Kurt Rasmussen, Mourits Nielsen, Robert Krarup Feidenhans'l, Paul Howes, J. Vedde

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    Abstract

    The interface structure of bonded Si(001) wafers with twist angle 6.5 degrees is studied as a function of annealing temperature. An ordered structure is observed in x-ray diffraction by monitoring a satellite reflection due to the periodic modulation near the interface, which results from the formation of a regular array of screw dislocations. This satellite reflection first appears at an annealing temperature of 800 degrees C, and increases abruptly up to temperatures of 1000 degrees C. We propose that this transition occurs when there is sufficient mobility for the reorganization of atomic steps and terraces in the interface region. (C) 2000 American Institute of Physics.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume76
    Issue number1
    Pages (from-to)70-72
    ISSN0003-6951
    DOIs
    Publication statusPublished - 2000

    Bibliographical note

    Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    Keywords

    • DIFFUSION
    • SILICON
    • SCANNING-TUNNELING-MICROSCOPY
    • SI(001)

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