TY - GEN
T1 - Fusion-Bonded Linear CMUT Arrays Based on Low Resistivity Thermally Stable Titanium Silicide Electrodes
AU - Nicolaisen, Peter Dalsgaard
AU - Steenberg, Kitty
AU - Grass, Rune Sixten
AU - Thomsen, Erik Vilain
N1 - Publisher Copyright:
© 2025 IEEE.
PY - 2025
Y1 - 2025
N2 - Capacitive Micromachined Ultrasound Transducers (CMUTs), fabricated using the LOCal Oxidation of Silicon (LOCOS) process and fusion bonding, offer precise control over cavity geometry and enable fabrication of large-scale arrays. However, conventional bottom electrode materials such as highly doped silicon (1-5 mΩ.cm) have limited conductivity, leading to signal attenuation in largerow-column addressed (RCA) arrays due to Resistor-Capacitor (RC) delay line effects. This work proposes to use the stable C54 phase titanium silicide as an alternative, offering low resistivity (13-20 μΩ.cm) and thermal stability up to 950°C, making it compatible with high-temperature bonding processes.A 15 MHz linear test array with half-wavelength pitch and 375 cells per element was fabricated to evaluate the feasibility of TiSi2 electrodes in RCA configurations. The bottom electrodes were formed using a Self ALigned silICIDE (SALICIDE) process. The bonding surface exhibited low roughness (Ra < 0.3 nm), enabling fusion bonding. Resistivity measurements yielded 24.9±0.1 μΩ.cm before bonding and 32.5 ± 0.1 μΩ.cm after bonding. These findings suggest that TiSi2 is a viable candidate for large-scale CMUT fabrication.
AB - Capacitive Micromachined Ultrasound Transducers (CMUTs), fabricated using the LOCal Oxidation of Silicon (LOCOS) process and fusion bonding, offer precise control over cavity geometry and enable fabrication of large-scale arrays. However, conventional bottom electrode materials such as highly doped silicon (1-5 mΩ.cm) have limited conductivity, leading to signal attenuation in largerow-column addressed (RCA) arrays due to Resistor-Capacitor (RC) delay line effects. This work proposes to use the stable C54 phase titanium silicide as an alternative, offering low resistivity (13-20 μΩ.cm) and thermal stability up to 950°C, making it compatible with high-temperature bonding processes.A 15 MHz linear test array with half-wavelength pitch and 375 cells per element was fabricated to evaluate the feasibility of TiSi2 electrodes in RCA configurations. The bottom electrodes were formed using a Self ALigned silICIDE (SALICIDE) process. The bonding surface exhibited low roughness (Ra < 0.3 nm), enabling fusion bonding. Resistivity measurements yielded 24.9±0.1 μΩ.cm before bonding and 32.5 ± 0.1 μΩ.cm after bonding. These findings suggest that TiSi2 is a viable candidate for large-scale CMUT fabrication.
U2 - 10.1109/IUS62464.2025.11201585
DO - 10.1109/IUS62464.2025.11201585
M3 - Article in proceedings
AN - SCOPUS:105021815609
T3 - IEEE International Ultrasonics Symposium, IUS
BT - Proceedings of the 2025 IEEE International Ultrasonics Symposium
PB - IEEE
T2 - 2025 IEEE International Ultrasonics Symposium
Y2 - 15 September 2025 through 18 September 2025
ER -