From VHF to UHF CMOS-MEMS Monolithically Integrated Resonators

Jordi Teva; Abadal Gabriel Berini; A. Uranga; J. Verd; F. Torres; J.L. Lopez; J. Esteve; F. Pérez-Murano; N. Barniol

doi:10.1109/MEMSYS.2008.4443598

From VHF to UHF CMOS-MEMS Monolithically Integrated Resonators

Jordi Teva, Abadal Gabriel Berini, A. Uranga, J. Verd, F. Torres, J.L. Lopez, J. Esteve, F. Pérez-Murano, N. Barniol

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

This paper presents the design, fabrication and characterization of microresonators exhibiting resonance frequencies in the VHF and UHF bands, fabricated using the available layers of the standard and commercial CMOS technology, AMS-0.35mum. The resonators are released in a post-CMOS process consisting on a maskless wet etching. A clamped-clamped beam with resonance frequency of 290 MHz exhibiting Q-factors of 970 in air and 2836 in vacuum is presented. The fabrication and design of a ring bulk acoustic resonator (RBAR) designed to operate at 1 GHz is described. Preliminary results on the electrical characterization show a resonance frequency of 1.04 GHz and a quality factor of 400 in air.

Original language	English
Title of host publication	Proceeding of IEEE MEMS 2008 : Technical Digest
Place of Publication	Tucson, Arizona, USA
Publisher	IEEE
Publication date	2008
Pages	82-85
ISBN (Print)	14-24-41792-9
DOIs	https://doi.org/10.1109/MEMSYS.2008.4443598
Publication status	Published - 2008
Event	2008 IEEE 21st International Conference on Micro Electro Mechanical Systems - Tucson, United States Duration: 13 Jan 2008 → 17 Jan 2008 Conference number: 21 https://ieeexplore.ieee.org/xpl/conhome/4443569/proceeding

Conference

Conference	2008 IEEE 21st International Conference on Micro Electro Mechanical Systems
Number	21
Country/Territory	United States
City	Tucson
Period	13/01/2008 → 17/01/2008
Internet address	https://ieeexplore.ieee.org/xpl/conhome/4443569/proceeding

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@inproceedings{57e7d3579aeb43b7a17e33cc2a64765e,

title = "From VHF to UHF CMOS-MEMS Monolithically Integrated Resonators",

abstract = "This paper presents the design, fabrication and characterization of microresonators exhibiting resonance frequencies in the VHF and UHF bands, fabricated using the available layers of the standard and commercial CMOS technology, AMS-0.35mum. The resonators are released in a post-CMOS process consisting on a maskless wet etching. A clamped-clamped beam with resonance frequency of 290 MHz exhibiting Q-factors of 970 in air and 2836 in vacuum is presented. The fabrication and design of a ring bulk acoustic resonator (RBAR) designed to operate at 1 GHz is described. Preliminary results on the electrical characterization show a resonance frequency of 1.04 GHz and a quality factor of 400 in air.",

author = "Jordi Teva and Berini, {Abadal Gabriel} and A. Uranga and J. Verd and F. Torres and J.L. Lopez and J. Esteve and F. P{\'e}rez-Murano and N. Barniol",

year = "2008",

doi = "10.1109/MEMSYS.2008.4443598",

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pages = "82--85",

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publisher = "IEEE",

address = "United States",

note = "2008 IEEE 21st International Conference on Micro Electro Mechanical Systems, MEMS 2008 ; Conference date: 13-01-2008 Through 17-01-2008",

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}

Teva, J, Berini, AG, Uranga, A, Verd, J, Torres, F, Lopez, JL, Esteve, J, Pérez-Murano, F & Barniol, N 2008, From VHF to UHF CMOS-MEMS Monolithically Integrated Resonators. in Proceeding of IEEE MEMS 2008: Technical Digest. IEEE, Tucson, Arizona, USA, pp. 82-85, 2008 IEEE 21st International Conference on Micro Electro Mechanical Systems, Tucson, Arizona, United States, 13/01/2008. https://doi.org/10.1109/MEMSYS.2008.4443598

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T1 - From VHF to UHF CMOS-MEMS Monolithically Integrated Resonators

AU - Teva, Jordi

AU - Berini, Abadal Gabriel

AU - Uranga, A.

AU - Verd, J.

AU - Torres, F.

AU - Lopez, J.L.

AU - Esteve, J.

AU - Pérez-Murano, F.

AU - Barniol, N.

N1 - Conference code: 21

PY - 2008

Y1 - 2008

N2 - This paper presents the design, fabrication and characterization of microresonators exhibiting resonance frequencies in the VHF and UHF bands, fabricated using the available layers of the standard and commercial CMOS technology, AMS-0.35mum. The resonators are released in a post-CMOS process consisting on a maskless wet etching. A clamped-clamped beam with resonance frequency of 290 MHz exhibiting Q-factors of 970 in air and 2836 in vacuum is presented. The fabrication and design of a ring bulk acoustic resonator (RBAR) designed to operate at 1 GHz is described. Preliminary results on the electrical characterization show a resonance frequency of 1.04 GHz and a quality factor of 400 in air.

AB - This paper presents the design, fabrication and characterization of microresonators exhibiting resonance frequencies in the VHF and UHF bands, fabricated using the available layers of the standard and commercial CMOS technology, AMS-0.35mum. The resonators are released in a post-CMOS process consisting on a maskless wet etching. A clamped-clamped beam with resonance frequency of 290 MHz exhibiting Q-factors of 970 in air and 2836 in vacuum is presented. The fabrication and design of a ring bulk acoustic resonator (RBAR) designed to operate at 1 GHz is described. Preliminary results on the electrical characterization show a resonance frequency of 1.04 GHz and a quality factor of 400 in air.

U2 - 10.1109/MEMSYS.2008.4443598

DO - 10.1109/MEMSYS.2008.4443598

M3 - Article in proceedings

SN - 14-24-41792-9

SP - 82

EP - 85

BT - Proceeding of IEEE MEMS 2008

PB - IEEE

CY - Tucson, Arizona, USA

T2 - 2008 IEEE 21st International Conference on Micro Electro Mechanical Systems

Y2 - 13 January 2008 through 17 January 2008

ER -

From VHF to UHF CMOS-MEMS Monolithically Integrated Resonators

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