From VHF to UHF CMOS-MEMS Monolithically Integrated Resonators

Jordi Teva, Abadal Gabriel Berini, A. Uranga, J. Verd, F. Torres, J.L. Lopez, J. Esteve, F. Pérez-Murano, N. Barniol

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review


    This paper presents the design, fabrication and characterization of microresonators exhibiting resonance frequencies in the VHF and UHF bands, fabricated using the available layers of the standard and commercial CMOS technology, AMS-0.35mum. The resonators are released in a post-CMOS process consisting on a maskless wet etching. A clamped-clamped beam with resonance frequency of 290 MHz exhibiting Q-factors of 970 in air and 2836 in vacuum is presented. The fabrication and design of a ring bulk acoustic resonator (RBAR) designed to operate at 1 GHz is described. Preliminary results on the electrical characterization show a resonance frequency of 1.04 GHz and a quality factor of 400 in air.
    Original languageEnglish
    Title of host publicationProceeding of IEEE MEMS 2008 : Technical Digest
    Place of PublicationTucson, Arizona, USA
    Publication date2008
    ISBN (Print)14-24-41792-9
    Publication statusPublished - 2008
    Event2008 IEEE 21st International Conference on Micro Electro Mechanical Systems - Tucson, United States
    Duration: 13 Jan 200817 Jan 2008
    Conference number: 21


    Conference2008 IEEE 21st International Conference on Micro Electro Mechanical Systems
    Country/TerritoryUnited States
    Internet address


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