Frequency- and temperature-dependent dielectric response in hybrid molecular beam epitaxy-grown BaSnO3 films

William Nunn, Abhinav Prakash, Arghya Bhowmik, Ryan Haislmaier, Jin Yue, Juan Maria García Lastra, Bharat Jalan*

*Corresponding author for this work

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Abstract

We report on the dielectric response of epitaxial BaSnO3 films grown on Nb-doped SrTiO3 (001) substrates using a hybrid molecular beam epitaxy approach. Metal-insulator-metal capacitors were fabricated to obtain frequency- and temperature-dependent dielectric constant and loss. Irrespective of film thickness and cation stoichiometry, the dielectric constant obtained from Ba1−xSn1−yO3 films remained largely unchanged at 15-17 and was independent of frequency and temperature. A loss tangent of ∼1 × 10−3 at 1 kHz < f < 100 kHz was obtained for stoichiometric films, which increased significantly with non-stoichiometry. Using density functional theory calculations, these results are discussed in the context of point defect complexes that can form during film synthesis.
Original languageEnglish
Article number066107
JournalA P L Materials
Volume6
Issue number6
Number of pages6
ISSN2166-532X
DOIs
Publication statusPublished - 2018

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