The nonlinear optical properties of semiconductor quantum dots are of interest, both fundamentally and for potential device applications. Large optical nonlinearities are predicted due to the three dimensional confinement but the small active volume of the dots and their large inhomogeneous broadening strongly reduce the interaction with the electromagnetic field. Until now, four-wave mixing (FWM) in III-V quantum dots has only been reported in optical amplifiers at room temperature, where the interaction length is increased by waveguiding in the quantum dot plane. We have carried out degenerate FWM experiments in a slab geometry on a sample containing 10 layers of MBE-grown In0.5Al0.04Ga0.46As quantum dots (QDs) with 50-nm Al0.08Ga0.92As barriers. Ground state photoluminescence emission was measured.
|Title of host publication||Summaries of Papers Presented at the Technical Digest Quantum Electronics and Laser Science Conference|
|Publisher||Opt. Soc. America|
|Publication status||Published - 2001|
|Event||2001 Quantum Electronics and Laser Science Conference - Baltimore, MD, United States|
Duration: 6 May 2001 → 10 May 2001
|Conference||2001 Quantum Electronics and Laser Science Conference|
|Period||06/05/2001 → 10/05/2001|