Four-wave mixing in InAlGaAs quantum dots

Kristjan Leosson, Dan Birkedal, Jørn Märcher Hvam

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The nonlinear optical properties of semiconductor quantum dots are of interest, both fundamentally and for potential device applications. Large optical nonlinearities are predicted due to the three dimensional confinement but the small active volume of the dots and their large inhomogeneous broadening strongly reduce the interaction with the electromagnetic field. Until now, four-wave mixing (FWM) in III-V quantum dots has only been reported in optical amplifiers at room temperature, where the interaction length is increased by waveguiding in the quantum dot plane. We have carried out degenerate FWM experiments in a slab geometry on a sample containing 10 layers of MBE-grown In0.5Al0.04Ga0.46As quantum dots (QDs) with 50-nm Al0.08Ga0.92As barriers. Ground state photoluminescence emission was measured.
Original languageEnglish
Title of host publicationSummaries of Papers Presented at the Technical Digest Quantum Electronics and Laser Science Conference
PublisherOpt. Soc. America
Publication date2001
ISBN (Print)1-55752-663-X
Publication statusPublished - 2001
Event2001 Quantum Electronics and Laser Science Conference - Baltimore, MD, United States
Duration: 6 May 200110 May 2001


Conference2001 Quantum Electronics and Laser Science Conference
CountryUnited States
CityBaltimore, MD
Internet address

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