Four-wave mixing in InAlGaAs quantum dots

Kristjan Leosson; Dan Birkedal; Jørn Märcher Hvam

doi:10.1109/QELS.2001.961817

Four-wave mixing in InAlGaAs quantum dots

Kristjan Leosson, Dan Birkedal, Jørn Märcher Hvam

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

The nonlinear optical properties of semiconductor quantum dots are of interest, both fundamentally and for potential device applications. Large optical nonlinearities are predicted due to the three dimensional confinement but the small active volume of the dots and their large inhomogeneous broadening strongly reduce the interaction with the electromagnetic field. Until now, four-wave mixing (FWM) in III-V quantum dots has only been reported in optical amplifiers at room temperature, where the interaction length is increased by waveguiding in the quantum dot plane. We have carried out degenerate FWM experiments in a slab geometry on a sample containing 10 layers of MBE-grown In0.5Al0.04Ga0.46As quantum dots (QDs) with 50-nm Al0.08Ga0.92As barriers. Ground state photoluminescence emission was measured.

Original language	English
Title of host publication	Summaries of Papers Presented at the Technical Digest Quantum Electronics and Laser Science Conference
Publisher	Opt. Soc. America
Publication date	2001
Pages	38-39
ISBN (Print)	1-55752-663-X
DOIs	https://doi.org/10.1109/QELS.2001.961817
Publication status	Published - 2001
Event	2001 Quantum Electronics and Laser Science Conference - Baltimore, MD, United States Duration: 6 May 2001 → 10 May 2001 http://www.opticsinfobase.org/search.cfm?meetingid=19&year=2001

Conference

Conference	2001 Quantum Electronics and Laser Science Conference
Country	United States
City	Baltimore, MD
Period	06/05/2001 → 10/05/2001
Internet address	http://www.opticsinfobase.org/search.cfm?meetingid=19&year=2001

Bibliographical note

Copyright: 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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10.1109/QELS.2001.961817

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title = "Four-wave mixing in InAlGaAs quantum dots",

abstract = "The nonlinear optical properties of semiconductor quantum dots are of interest, both fundamentally and for potential device applications. Large optical nonlinearities are predicted due to the three dimensional confinement but the small active volume of the dots and their large inhomogeneous broadening strongly reduce the interaction with the electromagnetic field. Until now, four-wave mixing (FWM) in III-V quantum dots has only been reported in optical amplifiers at room temperature, where the interaction length is increased by waveguiding in the quantum dot plane. We have carried out degenerate FWM experiments in a slab geometry on a sample containing 10 layers of MBE-grown In0.5Al0.04Ga0.46As quantum dots (QDs) with 50-nm Al0.08Ga0.92As barriers. Ground state photoluminescence emission was measured.",

author = "Kristjan Leosson and Dan Birkedal and Hvam, {J{\o}rn M{\"a}rcher}",

note = "Copyright: 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; 2001 Quantum Electronics and Laser Science Conference, QELS 2001 ; Conference date: 06-05-2001 Through 10-05-2001",

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AU - Birkedal, Dan

AU - Hvam, Jørn Märcher

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N2 - The nonlinear optical properties of semiconductor quantum dots are of interest, both fundamentally and for potential device applications. Large optical nonlinearities are predicted due to the three dimensional confinement but the small active volume of the dots and their large inhomogeneous broadening strongly reduce the interaction with the electromagnetic field. Until now, four-wave mixing (FWM) in III-V quantum dots has only been reported in optical amplifiers at room temperature, where the interaction length is increased by waveguiding in the quantum dot plane. We have carried out degenerate FWM experiments in a slab geometry on a sample containing 10 layers of MBE-grown In0.5Al0.04Ga0.46As quantum dots (QDs) with 50-nm Al0.08Ga0.92As barriers. Ground state photoluminescence emission was measured.

AB - The nonlinear optical properties of semiconductor quantum dots are of interest, both fundamentally and for potential device applications. Large optical nonlinearities are predicted due to the three dimensional confinement but the small active volume of the dots and their large inhomogeneous broadening strongly reduce the interaction with the electromagnetic field. Until now, four-wave mixing (FWM) in III-V quantum dots has only been reported in optical amplifiers at room temperature, where the interaction length is increased by waveguiding in the quantum dot plane. We have carried out degenerate FWM experiments in a slab geometry on a sample containing 10 layers of MBE-grown In0.5Al0.04Ga0.46As quantum dots (QDs) with 50-nm Al0.08Ga0.92As barriers. Ground state photoluminescence emission was measured.

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BT - Summaries of Papers Presented at the Technical Digest Quantum Electronics and Laser Science Conference

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