Four-probe sensing of temperature during Joule heating of silicon

Asger Kjærgård Pedersen; Daena Madhi; Daniil Mirosnikov; Peter Uhd Jepsen; Dirch Hjorth Petersen

doi:10.1063/5.0033465

Four-probe sensing of temperature during Joule heating of silicon

Asger Kjærgård Pedersen^*, Daena Madhi, Daniil Mirosnikov, Peter Uhd Jepsen, Dirch Hjorth Petersen

^*Corresponding author for this work

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Abstract

We present a four-probe setup for measuring temperature of Joule-heated silicon in two independent ways from the same voltage measurement: a method using the thermal dependence of resistivity and a method based on the measured sheet power density. The two methods are compared to optical temperature measurements made by fitting a gray-body model onto data from a commercial spectrometer. The two four-probe temperature measurements are conducted from 890 K to 1540 K, and they converge at temperatures above 1400 K indicating a high degree of self-consistency.

Original language	English
Article number	014903
Journal	Review of Scientific Instruments
Volume	92
Issue number	1
Number of pages	5
ISSN	0034-6748
DOIs	https://doi.org/10.1063/5.0033465
Publication status	Published - 2021

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abstract = "We present a four-probe setup for measuring temperature of Joule-heated silicon in two independent ways from the same voltage measurement: a method using the thermal dependence of resistivity and a method based on the measured sheet power density. The two methods are compared to optical temperature measurements made by fitting a gray-body model onto data from a commercial spectrometer. The two four-probe temperature measurements are conducted from 890 K to 1540 K, and they converge at temperatures above 1400 K indicating a high degree of self-consistency.",

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AU - Pedersen, Asger Kjærgård

AU - Madhi, Daena

AU - Mirosnikov, Daniil

AU - Jepsen, Peter Uhd

AU - Petersen, Dirch Hjorth

PY - 2021

Y1 - 2021

N2 - We present a four-probe setup for measuring temperature of Joule-heated silicon in two independent ways from the same voltage measurement: a method using the thermal dependence of resistivity and a method based on the measured sheet power density. The two methods are compared to optical temperature measurements made by fitting a gray-body model onto data from a commercial spectrometer. The two four-probe temperature measurements are conducted from 890 K to 1540 K, and they converge at temperatures above 1400 K indicating a high degree of self-consistency.

AB - We present a four-probe setup for measuring temperature of Joule-heated silicon in two independent ways from the same voltage measurement: a method using the thermal dependence of resistivity and a method based on the measured sheet power density. The two methods are compared to optical temperature measurements made by fitting a gray-body model onto data from a commercial spectrometer. The two four-probe temperature measurements are conducted from 890 K to 1540 K, and they converge at temperatures above 1400 K indicating a high degree of self-consistency.

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DO - 10.1063/5.0033465

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Four-probe sensing of temperature during Joule heating of silicon

Abstract

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