Formation of tilted clusters in the electrochemical deposition of copper on n-gas(001)

D.M. Smilgies; Robert Krarup Feidenhans'l; G. Scherb; D.M. Kolb; A. Kazimirov; J. Zegenhagen

doi:10.1016/S0039-6028(96)00847-3

Formation of tilted clusters in the electrochemical deposition of copper on n-gas(001)

D.M. Smilgies, Robert Krarup Feidenhans'l, G. Scherb, D.M. Kolb, A. Kazimirov, J. Zegenhagen

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Abstract

Using in-situ synchrotron X-ray diffraction, we have studied the epitaxial properties of Cu clusters electrochemically deposited on n-GaAs(001) substrates. The Cu clusters have (001) base planes and their [100] directions are aligned with the [110] directions of the GaAs(001) surface unit cell, but with a large angular spread of 4.5 degrees. Moreover, the Cu(001) planes are tilted with respect to the GaAs(001) substrate. The tilt of about 6 degrees did not show a preference for any substrate azimuth, giving rise to a ring-shaped (111)(Cu) reflection. This epitaxial tilt seems to be a novel mechanism of strain relief in an epitaxial system with a large mismatch of lattice constants and a large surface roughness.

Original language	English
Journal	Surface Science
Volume	367
Issue number	1
Pages (from-to)	40-44
ISSN	0039-6028
DOIs	https://doi.org/10.1016/S0039-6028(96)00847-3
Publication status	Published - 1996

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title = "Formation of tilted clusters in the electrochemical deposition of copper on n-gas(001)",

abstract = "Using in-situ synchrotron X-ray diffraction, we have studied the epitaxial properties of Cu clusters electrochemically deposited on n-GaAs(001) substrates. The Cu clusters have (001) base planes and their [100] directions are aligned with the [110] directions of the GaAs(001) surface unit cell, but with a large angular spread of 4.5 degrees. Moreover, the Cu(001) planes are tilted with respect to the GaAs(001) substrate. The tilt of about 6 degrees did not show a preference for any substrate azimuth, giving rise to a ring-shaped (111)(Cu) reflection. This epitaxial tilt seems to be a novel mechanism of strain relief in an epitaxial system with a large mismatch of lattice constants and a large surface roughness. ",

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T1 - Formation of tilted clusters in the electrochemical deposition of copper on n-gas(001)

AU - Smilgies, D.M.

AU - Feidenhans'l, Robert Krarup

AU - Scherb, G.

AU - Kolb, D.M.

AU - Kazimirov, A.

AU - Zegenhagen, J.

PY - 1996

Y1 - 1996

N2 - Using in-situ synchrotron X-ray diffraction, we have studied the epitaxial properties of Cu clusters electrochemically deposited on n-GaAs(001) substrates. The Cu clusters have (001) base planes and their [100] directions are aligned with the [110] directions of the GaAs(001) surface unit cell, but with a large angular spread of 4.5 degrees. Moreover, the Cu(001) planes are tilted with respect to the GaAs(001) substrate. The tilt of about 6 degrees did not show a preference for any substrate azimuth, giving rise to a ring-shaped (111)(Cu) reflection. This epitaxial tilt seems to be a novel mechanism of strain relief in an epitaxial system with a large mismatch of lattice constants and a large surface roughness.

AB - Using in-situ synchrotron X-ray diffraction, we have studied the epitaxial properties of Cu clusters electrochemically deposited on n-GaAs(001) substrates. The Cu clusters have (001) base planes and their [100] directions are aligned with the [110] directions of the GaAs(001) surface unit cell, but with a large angular spread of 4.5 degrees. Moreover, the Cu(001) planes are tilted with respect to the GaAs(001) substrate. The tilt of about 6 degrees did not show a preference for any substrate azimuth, giving rise to a ring-shaped (111)(Cu) reflection. This epitaxial tilt seems to be a novel mechanism of strain relief in an epitaxial system with a large mismatch of lattice constants and a large surface roughness.

KW - Nye funktionelle materialer

U2 - 10.1016/S0039-6028(96)00847-3

DO - 10.1016/S0039-6028(96)00847-3

M3 - Journal article

SN - 0039-6028

VL - 367

SP - 40

EP - 44

JO - Surface Science

JF - Surface Science

IS - 1

ER -

Formation of tilted clusters in the electrochemical deposition of copper on n-gas(001)

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