Formation of porous 4H-SiC by modified voltage controlled anodic oxidation for realization of high color rendering nitride-based white LEDs

Taisei Mizuno, Syota Akiyoshi, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Yiyu Ou, Haiyan Ou

Research output: Contribution to conferenceConference abstract for conferenceResearchpeer-review

42 Downloads (Pure)
Original languageEnglish
Publication date2023
Number of pages1
Publication statusPublished - 2023
Event14th International Conference on Nitride Semiconductors - Hilton Fukuoka Sea Hawk, Fukuoka, Japan
Duration: 12 Nov 202317 Nov 2023

Conference

Conference14th International Conference on Nitride Semiconductors
LocationHilton Fukuoka Sea Hawk
Country/TerritoryJapan
CityFukuoka
Period12/11/202317/11/2023

Cite this