The influence of the laser wavelength on the deposition of copper tin sulfide (CTS) and SnS-rich CTS with a 248-nm KrF excimer laser (pulse length τ = 20 ns) and a 355-nm frequency-tripled Nd:YAG laser (τ = 6 ns) was investigated. A comparative study of the two UV wavelengths shows that the CTS film growth rate per pulse was three to four times lower with the 248-nm laser than the 355-nm laser. SnS-rich CTS is more efficiently ablated than pure CTS. Films deposited at high fluence have submicron and micrometer size droplets, and the size and area density of the droplets do not vary significantly from 248 to 355 nm deposition. Irradiation at low fluence resulted in a non-stoichiometric material transfer with significant Cu deficiency in the as-deposited films. We discuss the transition from a non-stoichiometric material transfer at low fluence to a nearly stoichiometric ablation at high fluence based on a transition from a dominant evaporation regime to an ablation regime.