Formation mechanism and thermoelectric properties of CaMnO3 thin films synthesized by annealing of Ca0.5Mn0.5O films

Research output: Contribution to journalJournal article – Annual report year: 2019Researchpeer-review



  • Author: Ekström, Erik

    Linköping University, Sweden

  • Author: Febvrier, Arnaud le

    Linköping University, Sweden

  • Author: Fournier, Daniele

    Sorbonne Universités, France

  • Author: Lu, Jun

    Linköping University, Sweden

  • Author: Ene, Vladimir-Lucian

    Linköping University, Sweden

  • Author: Nong, Ngo Van

    Department of Energy Conversion and Storage, Technical University of Denmark, Frederiksborgvej 399, 4000, Roskilde, Denmark

  • Author: Eriksson, Fredrik

    Linköping University, Sweden

  • Author: Eklund, Per

    Linköping University, Sweden

  • Author: Paul, Biplab

    Linköping University, Sweden

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A two-step synthesis approach was utilized to grow CaMnO3 on M-, R- and C-plane sapphire substrates. Radio-frequency reactive magnetron sputtering was used to grow rock-salt-structured (Ca, Mn)O followed by a 3-h annealing step at 800 °C in oxygen flow to form the distorted perovskite phase CaMnO3. The effect of temperature in the post-annealing step was investigated using x-ray diffraction. The phase transformation to CaMnO3 started at 450 °C and was completed at 550 °C. Films grown on R- and C-plane sapphire showed similar structure with a mixed orientation, whereas the film grown on M-plane sapphire was epitaxially grown with an out-of-plane orientation in the [202] direction. The thermoelectric characterization showed that the film grown on M-plane sapphire has about 3.5 times lower resistivity compared to the other films with a resistivity of 0.077 Ωcm at 500 °C. The difference in resistivity is a result from difference in crystal structure, single orientation for M-plane sapphire compared to mixed for R- and C-plane sapphire. The highest absolute Seebeck coefficient value is − 350 µV K−1 for all films and is decreasing with temperature.
Original languageEnglish
JournalJournal of Materials Science
Issue number11
Pages (from-to)8482-8491
Publication statusPublished - 2019
CitationsWeb of Science® Times Cited: No match on DOI

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