Abstract
Germanium nanocrystals are being extensively examined. Their unique optical properties (brought about by the quantum confinement effect) could potentially be applied in wide areas of nonlinear optics, light emission and solid state memory etc. In this paper, Ge nanocrystals embedded in a SiO2 matrix were formed by complementary metal-oxide-semiconductor compatible technology, e.g. plasma enhanced chemical vapour deposition and annealing. Different sizes of the Ge nanocrystals were prepared and analyzed by transmission electron microscopy with respect to their size, distribution and crystallization. The samples of different size Ge nanocrystals embedded in the SiO2 matrix were characterized by Raman spectroscopy and photoluminescence. Interplayed size and strain effect of Ge nanocystals was demonstrated by Raman spectroscopy after excluding the thermal effect with proper excitation laser power. It was clarified that two strong emission peaks at 3.19 eV and 4.40 eV are from the interface between Ge nanocrystals and SiO2 matrix.
| Original language | English |
|---|---|
| Journal | Optical Materials Express |
| Volume | 1 |
| Issue number | 4 |
| Pages (from-to) | 643-651 |
| ISSN | 2159-3930 |
| Publication status | Published - 2011 |
Bibliographical note
This paper was published in Optical Materials Express and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-1-4-643. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.Keywords
- Nanomaterials
- Semiconductor materials
- Photoluminescence
- Spectroscopy