Fluorescent SiC for white light-emitting diodes

Haiyan Ou (Invited author), Yiyu Ou (Invited author), S. Kamiyama (Invited author), M. Kaiser (Invited author), P. Wellmann (Invited author), M. K. Linnarsson (Invited author), V. Jokubavicius (Invited author), R. Yakimova (Invited author), M. Syvajarvi (Invited author)

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    Abstract

    The strong photoluminescence from f-SiC was achieved after the optimization of the B and N concentrations. Surface nanostructures were successfully applied to enhance the extraction efficiency. f-SiC is a promising wavelength convertor for white LEDs.
    Original languageEnglish
    Title of host publicationACP Technical Digest
    Number of pages3
    PublisherOptical Society of America
    Publication date2012
    PagesJS4F.1
    Publication statusPublished - 2012
    EventAsia Communications and Photonics Conference (ACP 2012) - Guangzhou, China
    Duration: 7 Nov 201210 Nov 2012
    http://www.acp-conf.org/

    Conference

    ConferenceAsia Communications and Photonics Conference (ACP 2012)
    Country/TerritoryChina
    CityGuangzhou
    Period07/11/201210/11/2012
    Internet address

    Bibliographical note

    This paper was published in ACP Technical Digest and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://www.opticsinfobase.org/abstract.cfm?URI=ACP-2012-JS4F.1. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.

    Invited paper.

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