Fluorescent SiC as a new material for white LEDs

M. Syväjärvi, J. Müller, J. W. Sun, V. Grivickas, Yiyu Ou, V. Jokubavicius, P. Hens, M. Kaisr, K. Ariyawong, K. Gulbinas, P. Hens, R. Liljedahl, M. K. Linnarsson, S. Kamiyama, P. Wellmann, E. Spiecker, Haiyan Ou

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Current III–V-based white light-emitting diodes (LEDs) are available. However, their yellow phosphor converter is not efficient at high currents and includes rare-earth metals, which are becoming scarce. In this paper, we present the growth of a fluorescent silicon carbide material that is obtained by nitrogen and boron doping and that acts as a converter using a semiconductor. The luminescence is obtained at room temperature, and shows a broad luminescence band characteristic of donor-to-acceptor pair recombination. Photoluminescence intensities and carrier lifetimes reflect a sensitivity to nitrogen and boron concentrations. For an LED device, the growth needs to apply low-off-axis substrates. We show by ultra-high-resolution analytical transmission electron microscopy using aberration-corrected electrons that the growth mechanism can be stable and that there is a perfect epitaxial relation from the low-off-axis substrate and the doped layer even when there is step-bunching.
Original languageEnglish
JournalPhysica Scripta
Volume2012
Issue numberT148
Pages (from-to)014002
ISSN0031-8949
DOIs
Publication statusPublished - 2012
Event24th Nordic Semiconductor Meeting - Fuglsøcentret, Aarhus, Denmark
Duration: 19 Jun 201122 Jun 2011
Conference number: 24

Conference

Conference24th Nordic Semiconductor Meeting
Number24
LocationFuglsøcentret
CountryDenmark
CityAarhus
Period19/06/201122/06/2011

Cite this

Syväjärvi, M., Müller, J., Sun, J. W., Grivickas, V., Ou, Y., Jokubavicius, V., ... Ou, H. (2012). Fluorescent SiC as a new material for white LEDs. Physica Scripta, 2012(T148), 014002. https://doi.org/10.1088/0031-8949/2012/T148/014002
Syväjärvi, M. ; Müller, J. ; Sun, J. W. ; Grivickas, V. ; Ou, Yiyu ; Jokubavicius, V. ; Hens, P. ; Kaisr, M. ; Ariyawong, K. ; Gulbinas, K. ; Hens, P. ; Liljedahl, R. ; Linnarsson, M. K. ; Kamiyama, S. ; Wellmann, P. ; Spiecker, E. ; Ou, Haiyan. / Fluorescent SiC as a new material for white LEDs. In: Physica Scripta. 2012 ; Vol. 2012, No. T148. pp. 014002.
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title = "Fluorescent SiC as a new material for white LEDs",
abstract = "Current III–V-based white light-emitting diodes (LEDs) are available. However, their yellow phosphor converter is not efficient at high currents and includes rare-earth metals, which are becoming scarce. In this paper, we present the growth of a fluorescent silicon carbide material that is obtained by nitrogen and boron doping and that acts as a converter using a semiconductor. The luminescence is obtained at room temperature, and shows a broad luminescence band characteristic of donor-to-acceptor pair recombination. Photoluminescence intensities and carrier lifetimes reflect a sensitivity to nitrogen and boron concentrations. For an LED device, the growth needs to apply low-off-axis substrates. We show by ultra-high-resolution analytical transmission electron microscopy using aberration-corrected electrons that the growth mechanism can be stable and that there is a perfect epitaxial relation from the low-off-axis substrate and the doped layer even when there is step-bunching.",
author = "M. Syv{\"a}j{\"a}rvi and J. M{\"u}ller and Sun, {J. W.} and V. Grivickas and Yiyu Ou and V. Jokubavicius and P. Hens and M. Kaisr and K. Ariyawong and K. Gulbinas and P. Hens and R. Liljedahl and Linnarsson, {M. K.} and S. Kamiyama and P. Wellmann and E. Spiecker and Haiyan Ou",
year = "2012",
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language = "English",
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pages = "014002",
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Syväjärvi, M, Müller, J, Sun, JW, Grivickas, V, Ou, Y, Jokubavicius, V, Hens, P, Kaisr, M, Ariyawong, K, Gulbinas, K, Hens, P, Liljedahl, R, Linnarsson, MK, Kamiyama, S, Wellmann, P, Spiecker, E & Ou, H 2012, 'Fluorescent SiC as a new material for white LEDs', Physica Scripta, vol. 2012, no. T148, pp. 014002. https://doi.org/10.1088/0031-8949/2012/T148/014002

Fluorescent SiC as a new material for white LEDs. / Syväjärvi, M.; Müller, J.; Sun, J. W.; Grivickas, V.; Ou, Yiyu; Jokubavicius, V.; Hens, P.; Kaisr, M.; Ariyawong, K.; Gulbinas, K.; Hens, P.; Liljedahl, R.; Linnarsson, M. K.; Kamiyama, S.; Wellmann, P.; Spiecker, E.; Ou, Haiyan.

In: Physica Scripta, Vol. 2012, No. T148, 2012, p. 014002.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Fluorescent SiC as a new material for white LEDs

AU - Syväjärvi, M.

AU - Müller, J.

AU - Sun, J. W.

AU - Grivickas, V.

AU - Ou, Yiyu

AU - Jokubavicius, V.

AU - Hens, P.

AU - Kaisr, M.

AU - Ariyawong, K.

AU - Gulbinas, K.

AU - Hens, P.

AU - Liljedahl, R.

AU - Linnarsson, M. K.

AU - Kamiyama, S.

AU - Wellmann, P.

AU - Spiecker, E.

AU - Ou, Haiyan

PY - 2012

Y1 - 2012

N2 - Current III–V-based white light-emitting diodes (LEDs) are available. However, their yellow phosphor converter is not efficient at high currents and includes rare-earth metals, which are becoming scarce. In this paper, we present the growth of a fluorescent silicon carbide material that is obtained by nitrogen and boron doping and that acts as a converter using a semiconductor. The luminescence is obtained at room temperature, and shows a broad luminescence band characteristic of donor-to-acceptor pair recombination. Photoluminescence intensities and carrier lifetimes reflect a sensitivity to nitrogen and boron concentrations. For an LED device, the growth needs to apply low-off-axis substrates. We show by ultra-high-resolution analytical transmission electron microscopy using aberration-corrected electrons that the growth mechanism can be stable and that there is a perfect epitaxial relation from the low-off-axis substrate and the doped layer even when there is step-bunching.

AB - Current III–V-based white light-emitting diodes (LEDs) are available. However, their yellow phosphor converter is not efficient at high currents and includes rare-earth metals, which are becoming scarce. In this paper, we present the growth of a fluorescent silicon carbide material that is obtained by nitrogen and boron doping and that acts as a converter using a semiconductor. The luminescence is obtained at room temperature, and shows a broad luminescence band characteristic of donor-to-acceptor pair recombination. Photoluminescence intensities and carrier lifetimes reflect a sensitivity to nitrogen and boron concentrations. For an LED device, the growth needs to apply low-off-axis substrates. We show by ultra-high-resolution analytical transmission electron microscopy using aberration-corrected electrons that the growth mechanism can be stable and that there is a perfect epitaxial relation from the low-off-axis substrate and the doped layer even when there is step-bunching.

U2 - 10.1088/0031-8949/2012/T148/014002

DO - 10.1088/0031-8949/2012/T148/014002

M3 - Journal article

VL - 2012

SP - 014002

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

IS - T148

ER -

Syväjärvi M, Müller J, Sun JW, Grivickas V, Ou Y, Jokubavicius V et al. Fluorescent SiC as a new material for white LEDs. Physica Scripta. 2012;2012(T148):014002. https://doi.org/10.1088/0031-8949/2012/T148/014002