Fluorescent SiC as a new material for white LEDs

M. Syväjärvi, J. Müller, J. W. Sun, V. Grivickas, Yiyu Ou, V. Jokubavicius, P. Hens, M. Kaisr, K. Ariyawong, K. Gulbinas, P. Hens, R. Liljedahl, M. K. Linnarsson, S. Kamiyama, P. Wellmann, E. Spiecker, Haiyan Ou

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Current III–V-based white light-emitting diodes (LEDs) are available. However, their yellow phosphor converter is not efficient at high currents and includes rare-earth metals, which are becoming scarce. In this paper, we present the growth of a fluorescent silicon carbide material that is obtained by nitrogen and boron doping and that acts as a converter using a semiconductor. The luminescence is obtained at room temperature, and shows a broad luminescence band characteristic of donor-to-acceptor pair recombination. Photoluminescence intensities and carrier lifetimes reflect a sensitivity to nitrogen and boron concentrations. For an LED device, the growth needs to apply low-off-axis substrates. We show by ultra-high-resolution analytical transmission electron microscopy using aberration-corrected electrons that the growth mechanism can be stable and that there is a perfect epitaxial relation from the low-off-axis substrate and the doped layer even when there is step-bunching.
Original languageEnglish
JournalPhysica Scripta
Volume2012
Issue numberT148
Pages (from-to)014002
ISSN0031-8949
DOIs
Publication statusPublished - 2012
Event24th Nordic Semiconductor Meeting - Fuglsøcentret, Aarhus, Denmark
Duration: 19 Jun 201122 Jun 2011
Conference number: 24

Conference

Conference24th Nordic Semiconductor Meeting
Number24
LocationFuglsøcentret
CountryDenmark
CityAarhus
Period19/06/201122/06/2011

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