Flicker noise comparison of direct conversion mixers using Schottky and HBT dioderings in SiGe:C BiCMOS technology

Rasmus Schandorph Michaelsen; Tom Keinicke Johansen; Kjeld Tamborg; Michele Squartecchia

doi:10.1109/INMMIC.2015.7330373

Flicker noise comparison of direct conversion mixers using Schottky and HBT dioderings in SiGe:C BiCMOS technology

Rasmus Schandorph Michaelsen
, Tom Keinicke Johansen
, Kjeld Tamborg
, Michele Squartecchia

Weibel Scientific A/S

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

In this paper, we present flicker noise measurements of two X-band direct conversion mixers implemented in a SiGe:C BiCMOS technology. Both mixers use a ring structure with either Schottky diodes or diode-connected HBTs for double balanced operation. The mixers are packaged in a metal casing on an Arlon 25N substrate to shield the sensitive noise measurement. Conversion loss measurements of both mixers is performed both for on-wafer and packaged versions. The experimental results shows that the Schottky diode mixer exhibits a 1/f noise corner frequency of 250 kHz, while the diode connected HBT circuit demonstrates a 1/f noise corner frequency around 10 kHz.

Original language	English
Title of host publication	Proceedings of 2015 Integrated Nonlinear Microwave and Millimetre-Wave Circuits Workshop
Number of pages	3
Publisher	IEEE
Publication date	2015
Pages	1-3
ISBN (Print)	9781467364966
DOIs	https://doi.org/10.1109/INMMIC.2015.7330373
Publication status	Published - 2015
Event	International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits 2015 - Taormina, Italy Duration: 1 Oct 2015 → 2 Oct 2015 http://www.inmmic.org

Conference

Conference	International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits 2015
Country/Territory	Italy
City	Taormina
Period	01/10/2015 → 02/10/2015
Internet address	http://www.inmmic.org

Keywords

Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
General Topics for Engineers
diode connected HBT
flicker (1/f) noise
Frequency measurement
Heterojunction bipolar transistors
Loss measurement
Mixer
Mixers
MMIC
Noise measurement
Schottky diode
Schottky diodes

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07330373

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@inproceedings{6a904d9a496f4aaeb317b2749749bb26,

title = "Flicker noise comparison of direct conversion mixers using Schottky and HBT dioderings in SiGe:C BiCMOS technology",

abstract = "In this paper, we present flicker noise measurements of two X-band direct conversion mixers implemented in a SiGe:C BiCMOS technology. Both mixers use a ring structure with either Schottky diodes or diode-connected HBTs for double balanced operation. The mixers are packaged in a metal casing on an Arlon 25N substrate to shield the sensitive noise measurement. Conversion loss measurements of both mixers is performed both for on-wafer and packaged versions. The experimental results shows that the Schottky diode mixer exhibits a 1/f noise corner frequency of 250 kHz, while the diode connected HBT circuit demonstrates a 1/f noise corner frequency around 10 kHz.",

keywords = "Components, Circuits, Devices and Systems, Fields, Waves and Electromagnetics, General Topics for Engineers, diode connected HBT, flicker (1/f) noise, Frequency measurement, Heterojunction bipolar transistors, Loss measurement, Mixer, Mixers, MMIC, Noise measurement, Schottky diode, Schottky diodes",

author = "Michaelsen, \{Rasmus Schandorph\} and Johansen, \{Tom Keinicke\} and Kjeld Tamborg and Michele Squartecchia",

year = "2015",

doi = "10.1109/INMMIC.2015.7330373",

language = "English",

isbn = "9781467364966",

pages = "1--3",

booktitle = "Proceedings of 2015 Integrated Nonlinear Microwave and Millimetre-Wave Circuits Workshop",

publisher = "IEEE",

address = "United States",

note = "International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits 2015, INMMiC 2015 ; Conference date: 01-10-2015 Through 02-10-2015",

url = "http://www.inmmic.org",

}

Michaelsen, RS, Johansen, TK, Tamborg, K & Squartecchia, M 2015, Flicker noise comparison of direct conversion mixers using Schottky and HBT dioderings in SiGe:C BiCMOS technology. in Proceedings of 2015 Integrated Nonlinear Microwave and Millimetre-Wave Circuits Workshop. IEEE, pp. 1-3, International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits 2015, Taormina, Italy, 01/10/2015. https://doi.org/10.1109/INMMIC.2015.7330373

Flicker noise comparison of direct conversion mixers using Schottky and HBT dioderings in SiGe:C BiCMOS technology. / Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld et al.
Proceedings of 2015 Integrated Nonlinear Microwave and Millimetre-Wave Circuits Workshop. IEEE, 2015. p. 1-3.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Flicker noise comparison of direct conversion mixers using Schottky and HBT dioderings in SiGe:C BiCMOS technology

AU - Michaelsen, Rasmus Schandorph

AU - Johansen, Tom Keinicke

AU - Tamborg, Kjeld

AU - Squartecchia, Michele

PY - 2015

Y1 - 2015

N2 - In this paper, we present flicker noise measurements of two X-band direct conversion mixers implemented in a SiGe:C BiCMOS technology. Both mixers use a ring structure with either Schottky diodes or diode-connected HBTs for double balanced operation. The mixers are packaged in a metal casing on an Arlon 25N substrate to shield the sensitive noise measurement. Conversion loss measurements of both mixers is performed both for on-wafer and packaged versions. The experimental results shows that the Schottky diode mixer exhibits a 1/f noise corner frequency of 250 kHz, while the diode connected HBT circuit demonstrates a 1/f noise corner frequency around 10 kHz.

AB - In this paper, we present flicker noise measurements of two X-band direct conversion mixers implemented in a SiGe:C BiCMOS technology. Both mixers use a ring structure with either Schottky diodes or diode-connected HBTs for double balanced operation. The mixers are packaged in a metal casing on an Arlon 25N substrate to shield the sensitive noise measurement. Conversion loss measurements of both mixers is performed both for on-wafer and packaged versions. The experimental results shows that the Schottky diode mixer exhibits a 1/f noise corner frequency of 250 kHz, while the diode connected HBT circuit demonstrates a 1/f noise corner frequency around 10 kHz.

KW - Components, Circuits, Devices and Systems

KW - Fields, Waves and Electromagnetics

KW - General Topics for Engineers

KW - diode connected HBT

KW - flicker (1/f) noise

KW - Frequency measurement

KW - Heterojunction bipolar transistors

KW - Loss measurement

KW - Mixer

KW - Mixers

KW - MMIC

KW - Noise measurement

KW - Schottky diode

KW - Schottky diodes

U2 - 10.1109/INMMIC.2015.7330373

DO - 10.1109/INMMIC.2015.7330373

M3 - Article in proceedings

SN - 9781467364966

SP - 1

EP - 3

BT - Proceedings of 2015 Integrated Nonlinear Microwave and Millimetre-Wave Circuits Workshop

PB - IEEE

T2 - International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits 2015

Y2 - 1 October 2015 through 2 October 2015

ER -

Flicker noise comparison of direct conversion mixers using Schottky and HBT dioderings in SiGe:C BiCMOS technology

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