Flicker noise comparison of direct conversion mixers using Schottky and HBT dioderings in SiGe:C BiCMOS technology

Rasmus Schandorph Michaelsen, Tom Keinicke Johansen, Kjeld Tamborg, Michele Squartecchia

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Abstract

In this paper, we present flicker noise measurements of two X-band direct conversion mixers implemented in a SiGe:C BiCMOS technology. Both mixers use a ring structure with either Schottky diodes or diode-connected HBTs for double balanced operation. The mixers are packaged in a metal casing on an Arlon 25N substrate to shield the sensitive noise measurement. Conversion loss measurements of both mixers is performed both for on-wafer and packaged versions. The experimental results shows that the Schottky diode mixer exhibits a 1/f noise corner frequency of 250 kHz, while the diode connected HBT circuit demonstrates a 1/f noise corner frequency around 10 kHz.
Original languageEnglish
Title of host publicationProceedings of 2015 Integrated Nonlinear Microwave and Millimetre-Wave Circuits Workshop
Number of pages3
PublisherIEEE
Publication date2015
Pages1-3
ISBN (Print)9781467364966
DOIs
Publication statusPublished - 2015
EventInternational Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits 2015 - Taormina, Italy
Duration: 1 Oct 20152 Oct 2015
http://www.inmmic.org

Conference

ConferenceInternational Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits 2015
CountryItaly
CityTaormina
Period01/10/201502/10/2015
Internet address

Keywords

  • Components, Circuits, Devices and Systems
  • Fields, Waves and Electromagnetics
  • General Topics for Engineers
  • diode connected HBT
  • flicker (1/f) noise
  • Frequency measurement
  • Heterojunction bipolar transistors
  • Loss measurement
  • Mixer
  • Mixers
  • MMIC
  • Noise measurement
  • Schottky diode
  • Schottky diodes

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