Flexural-Phonon Scattering Induced by Electrostatic Gating in Graphene

Tue Gunst, Kristen Kaasbjerg, Mads Brandbyge

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Abstract

Graphene has an extremely high carrier mobility partly due to its planar mirror symmetry inhibiting scattering by the highly occupied acoustic flexural phonons. Electrostatic gating of a graphene device can break the planar mirror symmetry, yielding a coupling mechanism to the flexural phonons.We examine the effect of the gate-induced one-phonon scattering on the mobility for several gate geometries and dielectric environments using first-principles calculations based on density functional theory and the Boltzmann equation. We demonstrate that this scattering mechanism can be a mobility-limiting factor, and show how the carrier density and temperature scaling of the mobility depends on the electrostatic environment. Our findings may explain the high deformation potential for in-plane acoustic phonons extracted from experiments and, furthermore, suggest a direct relation between device symmetry and resulting mobility.
Original languageEnglish
Article number046601
JournalPhysical Review Letters
Volume118
Issue number4
Number of pages6
ISSN0031-9007
DOIs
Publication statusPublished - 2017

Bibliographical note

© 2017 American Physical Society

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