Flexible Stamp for Nanoimprint Lithography

Theodor Nielsen; Rasmus H. Pedersen; Ole Hansen; T. Haatainen; A. Tollki; J. Ahopelto; Anders Kristensen

doi:10.1109/MEMSYS.2005.1453978

Flexible Stamp for Nanoimprint Lithography

Theodor Nielsen, Rasmus H. Pedersen, Ole Hansen, T. Haatainen, A. Tollki, J. Ahopelto, Anders Kristensen

Center for Individual Nanoparticle Functionality

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

The design, fabrication and performance of a flexible silicon stamp for homogenous large area nanoimprint lithography (NIL) are presented. The flexible stamp is fabricated by bulk semiconductor micro machining of a 4-inch silicon wafer and consists of thick anchor like imprint areas connected by membranes. The bending stiffness difference between the imprint areas and the membranes ensures that the deformation of the stamp during the imprint process mainly takes place in the membranes, leaving the imprint structures unaffected. By this design the strong demand to the parallelism between stamp and substrate in the imprint situation is decoupled from the pressing tool and the wafer quality. The stamp consist of 1562 imprint areas (1 mm × 1 mm) containing the patterns to be replicated. The imprinted patterns are characterized with respect to the imprint depth and the polymer residual layer thickness. It is found that within a 50 mm diameter the polymer residual layer thickness is 18.8 nm with a standard deviation of 6.6 nm.

Original language	English
Title of host publication	Technical Digest of the 18th IEEE Conference on Micro Electro Mechanical Systems, MEMS 2005
Publisher	IEEE
Publication date	2005
Pages	508-511
ISBN (Print)	0-7803-8732-5
DOIs	https://doi.org/10.1109/MEMSYS.2005.1453978
Publication status	Published - 2005
Event	18th IEEE International Conference on Micro Electro Mechanical Systems - Miami Beach, FL, United States Duration: 30 Jan 2005 → 3 Feb 2005 Conference number: 18

Conference

Conference	18th IEEE International Conference on Micro Electro Mechanical Systems
Number	18
Country/Territory	United States
City	Miami Beach, FL
Period	30/01/2005 → 03/02/2005

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Copyright: 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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@inproceedings{9a57e943732f4f9da51cc8a9a3a7f81e,

title = "Flexible Stamp for Nanoimprint Lithography",

abstract = "The design, fabrication and performance of a flexible silicon stamp for homogenous large area nanoimprint lithography (NIL) are presented. The flexible stamp is fabricated by bulk semiconductor micro machining of a 4-inch silicon wafer and consists of thick anchor like imprint areas connected by membranes. The bending stiffness difference between the imprint areas and the membranes ensures that the deformation of the stamp during the imprint process mainly takes place in the membranes, leaving the imprint structures unaffected. By this design the strong demand to the parallelism between stamp and substrate in the imprint situation is decoupled from the pressing tool and the wafer quality. The stamp consist of 1562 imprint areas (1 mm × 1 mm) containing the patterns to be replicated. The imprinted patterns are characterized with respect to the imprint depth and the polymer residual layer thickness. It is found that within a 50 mm diameter the polymer residual layer thickness is 18.8 nm with a standard deviation of 6.6 nm.",

author = "Theodor Nielsen and Pedersen, {Rasmus H.} and Ole Hansen and T. Haatainen and A. Tollki and J. Ahopelto and Anders Kristensen",

note = "Copyright: 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; 18th IEEE International Conference on Micro Electro Mechanical Systems , MEMS 2005 ; Conference date: 30-01-2005 Through 03-02-2005",

year = "2005",

doi = "10.1109/MEMSYS.2005.1453978",

language = "English",

isbn = "0-7803-8732-5",

pages = "508--511",

booktitle = "Technical Digest of the 18th IEEE Conference on Micro Electro Mechanical Systems, MEMS 2005",

publisher = "IEEE",

address = "United States",

}

Nielsen, T, Pedersen, RH, Hansen, O, Haatainen, T, Tollki, A, Ahopelto, J & Kristensen, A 2005, Flexible Stamp for Nanoimprint Lithography. in Technical Digest of the 18th IEEE Conference on Micro Electro Mechanical Systems, MEMS 2005. IEEE, pp. 508-511, 18th IEEE International Conference on Micro Electro Mechanical Systems , Miami Beach, FL, United States, 30/01/2005. https://doi.org/10.1109/MEMSYS.2005.1453978

TY - GEN

T1 - Flexible Stamp for Nanoimprint Lithography

AU - Nielsen, Theodor

AU - Pedersen, Rasmus H.

AU - Hansen, Ole

AU - Haatainen, T.

AU - Tollki, A.

AU - Ahopelto, J.

AU - Kristensen, Anders

N1 - Conference code: 18

PY - 2005

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N2 - The design, fabrication and performance of a flexible silicon stamp for homogenous large area nanoimprint lithography (NIL) are presented. The flexible stamp is fabricated by bulk semiconductor micro machining of a 4-inch silicon wafer and consists of thick anchor like imprint areas connected by membranes. The bending stiffness difference between the imprint areas and the membranes ensures that the deformation of the stamp during the imprint process mainly takes place in the membranes, leaving the imprint structures unaffected. By this design the strong demand to the parallelism between stamp and substrate in the imprint situation is decoupled from the pressing tool and the wafer quality. The stamp consist of 1562 imprint areas (1 mm × 1 mm) containing the patterns to be replicated. The imprinted patterns are characterized with respect to the imprint depth and the polymer residual layer thickness. It is found that within a 50 mm diameter the polymer residual layer thickness is 18.8 nm with a standard deviation of 6.6 nm.

AB - The design, fabrication and performance of a flexible silicon stamp for homogenous large area nanoimprint lithography (NIL) are presented. The flexible stamp is fabricated by bulk semiconductor micro machining of a 4-inch silicon wafer and consists of thick anchor like imprint areas connected by membranes. The bending stiffness difference between the imprint areas and the membranes ensures that the deformation of the stamp during the imprint process mainly takes place in the membranes, leaving the imprint structures unaffected. By this design the strong demand to the parallelism between stamp and substrate in the imprint situation is decoupled from the pressing tool and the wafer quality. The stamp consist of 1562 imprint areas (1 mm × 1 mm) containing the patterns to be replicated. The imprinted patterns are characterized with respect to the imprint depth and the polymer residual layer thickness. It is found that within a 50 mm diameter the polymer residual layer thickness is 18.8 nm with a standard deviation of 6.6 nm.

U2 - 10.1109/MEMSYS.2005.1453978

DO - 10.1109/MEMSYS.2005.1453978

M3 - Article in proceedings

SN - 0-7803-8732-5

SP - 508

EP - 511

BT - Technical Digest of the 18th IEEE Conference on Micro Electro Mechanical Systems, MEMS 2005

PB - IEEE

T2 - 18th IEEE International Conference on Micro Electro Mechanical Systems

Y2 - 30 January 2005 through 3 February 2005

ER -

Flexible Stamp for Nanoimprint Lithography

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