Abstract
This paper presents experimental results on MEMS metallic add-on post-fabrication effects on complementary metal oxide semiconductor (CMOS) transistors. Two versions of add-on processing, that use either e-beam evaporation or magnetron sputtering, are compared through investigation of the electrical parameters of n-channel and p-channel transistors. The magnetron sputtering technique is shown to be compatible with standard CMOS electronics without any restriction of the metal types and annealing requirements.
| Original language | English |
|---|---|
| Journal | Physica Scripta |
| Volume | T114 |
| Pages (from-to) | 184-187 |
| ISSN | 0031-8949 |
| DOIs | |
| Publication status | Published - 2004 |
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