Abstract
This paper presents experimental results on MEMS metallic add-on post-fabrication effects on complementary metal oxide semiconductor (CMOS) transistors. Two versions of add-on processing, that use either e-beam evaporation or magnetron sputtering, are compared through investigation of the electrical parameters of n-channel and p-channel transistors. The magnetron sputtering technique is shown to be compatible with standard CMOS electronics without any restriction of the metal types and annealing requirements.
Original language | English |
---|---|
Journal | Physica Scripta |
Volume | T114 |
Pages (from-to) | 184-187 |
ISSN | 0031-8949 |
DOIs | |
Publication status | Published - 2004 |