Finite-thickness metal-semiconductor-metal waveguide as plasmonic modulator

Viktoriia Babicheva, Radu Malureanu, Andrei Lavrinenko

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review


We analyze a finite-thickness metal-semiconductor-metal waveguide to be utilized as an ultra-compact plasmonic modulator in optoelectronic integrated circuits. The InP-based semiconductor core allows electrical control of signal propagation. We show that using thin metal layers instead of thick ones we can obtain higher effective index, which is required for high modulation speed. The ultra-compact layout and tight field confinement are the main advantages of such plasmonic modulators.
Original languageEnglish
Title of host publication AIP Conference Proceedings
PublisherAmerican Institute of Physics
Publication date2012
ISBN (Print)978-0-7354-1084-8
Publication statusPublished - 2012
Event5th International Workshop on Theoretical and Computational Nano-Photonics: TaCoNa-Photonics 2012 - Bad Honnef, Germany
Duration: 24 Oct 201226 Oct 2012


Conference5th International Workshop on Theoretical and Computational Nano-Photonics
CityBad Honnef
Internet address
SeriesA I P Conference Proceedings Series

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