Field emission from two-dimensional GeAs

Antonio Di Bartolomeo; Alessandro Grillo; Filippo Giubileo; Luca Camilli; Jianbo Sun; Daniele Capista; Maurizio Passacantando

doi:10.1088/1361-6463/abcc91

Field emission from two-dimensional GeAs

Antonio Di Bartolomeo^*, Alessandro Grillo, Filippo Giubileo, Luca Camilli, Jianbo Sun, Daniele Capista, Maurizio Passacantando

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and used as the channel of back-gate field-effect transistors. It is shown that their gate-modulated p-type conduction is decreased by exposure to light or electron beam. Moreover, the observation of a field emission (FE) current demonstrates the suitability of GeAs nanoflakes as cold cathodes for electron emission and opens up new perspective applications of two-dimensional GeAs in vacuum electronics. FE occurs with a turn-on field of ∼80 V µm⁻¹ , following the general Fowler-Nordheim model with high reproducibility.

Original language	English
Article number	105302
Journal	Journal of Physics D: Applied Physics
Volume	54
Issue number	10
Number of pages	7
ISSN	0022-3727
DOIs	https://doi.org/10.1088/1361-6463/abcc91
Publication status	Published - 2021

Bibliographical note

Funding Information:
This research was funded by the Italian Ministry of Education, University and Research (MIUR), projects Pico & Pro ARS01_01061 and RINASCIMENTO ARS01_01088. L C and J S want to express their gratitude to the Villum Fonden (Young Investigator Program, Project No. 19130). L C acknowledges support from MIUR via Programma per Giovani Ricercatori Rita Levi Montalcini 2017 .

Keywords

GeAs
2D materials
Field-effect transistor
Field emission
Electrical conductivity
Anisotropy

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title = "Field emission from two-dimensional GeAs",

abstract = "GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and used as the channel of back-gate field-effect transistors. It is shown that their gate-modulated p-type conduction is decreased by exposure to light or electron beam. Moreover, the observation of a field emission (FE) current demonstrates the suitability of GeAs nanoflakes as cold cathodes for electron emission and opens up new perspective applications of two-dimensional GeAs in vacuum electronics. FE occurs with a turn-on field of ∼80 V µm−1 , following the general Fowler-Nordheim model with high reproducibility.",

keywords = "GeAs, 2D materials, Field-effect transistor, Field emission, Electrical conductivity, Anisotropy",

author = "{Di Bartolomeo}, Antonio and Alessandro Grillo and Filippo Giubileo and Luca Camilli and Jianbo Sun and Daniele Capista and Maurizio Passacantando",

note = "Funding Information: This research was funded by the Italian Ministry of Education, University and Research (MIUR), projects Pico & Pro ARS01_01061 and RINASCIMENTO ARS01_01088. L C and J S want to express their gratitude to the Villum Fonden (Young Investigator Program, Project No. 19130). L C acknowledges support from MIUR via Programma per Giovani Ricercatori Rita Levi Montalcini 2017 . ",

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AU - Di Bartolomeo, Antonio

AU - Grillo, Alessandro

AU - Giubileo, Filippo

AU - Camilli, Luca

AU - Sun, Jianbo

AU - Capista, Daniele

AU - Passacantando, Maurizio

N1 - Funding Information: This research was funded by the Italian Ministry of Education, University and Research (MIUR), projects Pico & Pro ARS01_01061 and RINASCIMENTO ARS01_01088. L C and J S want to express their gratitude to the Villum Fonden (Young Investigator Program, Project No. 19130). L C acknowledges support from MIUR via Programma per Giovani Ricercatori Rita Levi Montalcini 2017 .

PY - 2021

Y1 - 2021

N2 - GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and used as the channel of back-gate field-effect transistors. It is shown that their gate-modulated p-type conduction is decreased by exposure to light or electron beam. Moreover, the observation of a field emission (FE) current demonstrates the suitability of GeAs nanoflakes as cold cathodes for electron emission and opens up new perspective applications of two-dimensional GeAs in vacuum electronics. FE occurs with a turn-on field of ∼80 V µm−1 , following the general Fowler-Nordheim model with high reproducibility.

AB - GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and used as the channel of back-gate field-effect transistors. It is shown that their gate-modulated p-type conduction is decreased by exposure to light or electron beam. Moreover, the observation of a field emission (FE) current demonstrates the suitability of GeAs nanoflakes as cold cathodes for electron emission and opens up new perspective applications of two-dimensional GeAs in vacuum electronics. FE occurs with a turn-on field of ∼80 V µm−1 , following the general Fowler-Nordheim model with high reproducibility.

KW - GeAs

KW - 2D materials

KW - Field-effect transistor

KW - Field emission

KW - Electrical conductivity

KW - Anisotropy

U2 - 10.1088/1361-6463/abcc91

DO - 10.1088/1361-6463/abcc91

M3 - Journal article

AN - SCOPUS:85098148284

SN - 0022-3727

VL - 54

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 10

M1 - 105302

ER -

Field emission from two-dimensional GeAs

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Bibliographical note

Keywords

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