Field Effect in Graphene-Based van der Waals Heterostructures: Stacking Sequence Matters: Stacking Sequence Matters

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Abstract

Stacked van der Waals (vdW) heterostructures where semiconducting two-dimensional (2D) materials are contacted by overlaid graphene electrodes enable atomically thin, flexible electronics. We use first-principles quantum transport simulations of graphene-contacted MoS2 devices to show how the transistor effect critically depends on the stacking configuration relative to the gate electrode. We can trace this behavior to the stacking-dependent response of the contact region to the capacitive electric field induced by the gate. The contact resistance is a central parameter and our observation establishes an important design rule for ultrathin devices based on 2D atomic crystals.
Original languageEnglish
JournalNano letters
Volume17
Issue number4
Pages (from-to)2660-2666
Number of pages7
ISSN1530-6984
DOIs
Publication statusPublished - 2017

Keywords

  • Density functional theory
  • Field-effect
  • Graphene
  • Nonequilibrium Green’s function
  • Transport
  • vdW heterostructures

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