Fast‐writing E‐beam for defining large arrays of nano‐holes

Efficient nanoscale patterning of large areas is required for sub-wavelength optics. For example, 200 nm periodic structures are often too small to be made with standard UV- and DUV-equipment. Still, the final product must be made at an economic cost. Here we use a fast-writing strategy described in [1], where electron beam lithography (EBL) with a focused Gaussian beam is used to define shapes directly. The serial technique is optimized for speed and pattern fidelity to a maximum writing speed of around 30 min/cm2 for 200 nm periods in 2D lattices. The overall costs in terms of machine time and feasibility are assessed for different topographies and dimensions.