Fast thermal nanoimprint lithography by a stamp with integrated heater

Massimo Tormen; Radu Malureanu; Rasmus Haugstrup Pedersen; Lasse Vestergaard Lorenzen; Kristian Hagsted Rasmussen; Christopher James Lüscher; Anders Kristensen; Ole Hansen

doi:10.1016/j.mee.2008.01.065

Fast thermal nanoimprint lithography by a stamp with integrated heater

Massimo Tormen, Radu Malureanu, Rasmus Haugstrup Pedersen, Lasse Vestergaard Lorenzen, Kristian Hagsted Rasmussen, Christopher James Lüscher, Anders Kristensen, Ole Hansen

TASC National Laboratory

Research output: Contribution to journal › Conference article › Research › peer-review

Abstract

We propose fast nanoimprinting lithography (NIL) process based on the use of stamps with integrated heater. The latter consists of heavily ion implantation n-type doped silicon layer buried below the microstructured surface of the stamp. The stamp is heated by Joule effect, by 50 μs 25 Hz repetition rate current pulses flowing in the conductive layer. Using this approach we have reproducibly imprinted areas of 2 cm2 within 16 s with residual layers in the range of few tens of nm. This result paves the way for processes in the sub-1 s timescale over large area surfaces.

Original language	English
Journal	Microelectronic Engineering
Volume	85
Issue number	5-6
Pages (from-to)	1229-1232
ISSN	0167-9317
DOIs	https://doi.org/10.1016/j.mee.2008.01.065
Publication status	Published - 2008
Event	33rd International Conference on Micro- and Nano-Engineering - Copenhagen, Denmark Duration: 23 Sept 2007 → 26 Sept 2007 Conference number: 33 http://www.mne07.org/

Conference

Conference	33rd International Conference on Micro- and Nano-Engineering
Number	33
Country/Territory	Denmark
City	Copenhagen
Period	23/09/2007 → 26/09/2007
Internet address	http://www.mne07.org/

Keywords

Integrated heater
Stamps
Joule effect
Nanoimprint lithography

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10.1016/j.mee.2008.01.065

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@inproceedings{bc51d54e151b4436aaf06cd8071dcb45,

title = "Fast thermal nanoimprint lithography by a stamp with integrated heater",

abstract = "We propose fast nanoimprinting lithography (NIL) process based on the use of stamps with integrated heater. The latter consists of heavily ion implantation n-type doped silicon layer buried below the microstructured surface of the stamp. The stamp is heated by Joule effect, by 50 μs 25 Hz repetition rate current pulses flowing in the conductive layer. Using this approach we have reproducibly imprinted areas of 2 cm2 within 16 s with residual layers in the range of few tens of nm. This result paves the way for processes in the sub-1 s timescale over large area surfaces.",

keywords = "Integrated heater, Stamps, Joule effect, Nanoimprint lithography",

author = "Massimo Tormen and Radu Malureanu and Pedersen, {Rasmus Haugstrup} and Lorenzen, {Lasse Vestergaard} and Rasmussen, {Kristian Hagsted} and L{\"u}scher, {Christopher James} and Anders Kristensen and Ole Hansen",

year = "2008",

doi = "10.1016/j.mee.2008.01.065",

language = "English",

volume = "85",

pages = "1229--1232",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "5-6",

note = "33rd International Conference on Micro- and Nano-Engineering, MNE07 ; Conference date: 23-09-2007 Through 26-09-2007",

url = "http://www.mne07.org/",

}

TY - GEN

T1 - Fast thermal nanoimprint lithography by a stamp with integrated heater

AU - Tormen, Massimo

AU - Malureanu, Radu

AU - Pedersen, Rasmus Haugstrup

AU - Lorenzen, Lasse Vestergaard

AU - Rasmussen, Kristian Hagsted

AU - Lüscher, Christopher James

AU - Kristensen, Anders

AU - Hansen, Ole

N1 - Conference code: 33

PY - 2008

Y1 - 2008

N2 - We propose fast nanoimprinting lithography (NIL) process based on the use of stamps with integrated heater. The latter consists of heavily ion implantation n-type doped silicon layer buried below the microstructured surface of the stamp. The stamp is heated by Joule effect, by 50 μs 25 Hz repetition rate current pulses flowing in the conductive layer. Using this approach we have reproducibly imprinted areas of 2 cm2 within 16 s with residual layers in the range of few tens of nm. This result paves the way for processes in the sub-1 s timescale over large area surfaces.

AB - We propose fast nanoimprinting lithography (NIL) process based on the use of stamps with integrated heater. The latter consists of heavily ion implantation n-type doped silicon layer buried below the microstructured surface of the stamp. The stamp is heated by Joule effect, by 50 μs 25 Hz repetition rate current pulses flowing in the conductive layer. Using this approach we have reproducibly imprinted areas of 2 cm2 within 16 s with residual layers in the range of few tens of nm. This result paves the way for processes in the sub-1 s timescale over large area surfaces.

KW - Integrated heater

KW - Stamps

KW - Joule effect

KW - Nanoimprint lithography

U2 - 10.1016/j.mee.2008.01.065

DO - 10.1016/j.mee.2008.01.065

M3 - Conference article

SN - 0167-9317

VL - 85

SP - 1229

EP - 1232

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 5-6

T2 - 33rd International Conference on Micro- and Nano-Engineering

Y2 - 23 September 2007 through 26 September 2007

ER -

Fast thermal nanoimprint lithography by a stamp with integrated heater

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Keywords

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