Fast silicon etching by negative ions in a matrix ECR plasma source

Research output: Contribution to conference › Conference abstract for conference › Research

Original language	English
Publication date	2010
Publication status	Published - 2010
Event	3rd Workshop on Plasma Etch and Strip in Microelectronics - Grenoble, France Duration: 4 Mar 2010 → 5 Mar 2010 Conference number: 3

Conference	3rd Workshop on Plasma Etch and Strip in Microelectronics
Number	3
Country/Territory	France
City	Grenoble
Period	04/03/2010 → 05/03/2010

Keywords

@conference{4f50cca43f444fc0b34927e0246ee1c6,

title = "Fast silicon etching by negative ions in a matrix ECR plasma source",

keywords = "Plasma processing, Fusion energy, Fusionsenergi, Plasmaprocessering",

author = "Mihai Draghici and Eugen Stamate",

year = "2010",

language = "English",

note = "3rd Workshop on Plasma Etch and Strip in Microelectronics, PESM2010 ; Conference date: 04-03-2010 Through 05-03-2010",

}

TY - ABST

T1 - Fast silicon etching by negative ions in a matrix ECR plasma source

AU - Draghici, Mihai

AU - Stamate, Eugen

N1 - Conference code: 3

PY - 2010

Y1 - 2010

KW - Plasma processing

KW - Fusion energy

KW - Fusionsenergi

KW - Plasmaprocessering

M3 - Conference abstract for conference

T2 - 3rd Workshop on Plasma Etch and Strip in Microelectronics

Y2 - 4 March 2010 through 5 March 2010

ER -